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  integrated 40 w high power poe Datasheet PDF File

For integrated 40 w high power poe Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    STODD03PQR STODD03

STMicroelectronics
ST Microelectronics
Part No. STODD03PQR STODD03
Description    Synchronous rectification
Monolithic 2 channel power management for high definition ODD with integrated power switch

File Size 589.65K  /  16 Page

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    IRS2332JTRPBF IRS2330D

International Rectifier
Part No. IRS2332JTRPBF IRS2330D
Description high Voltage high Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
high Voltage high Speed power MOSFET and IGBT Driver with integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.

File Size 1,098.33K  /  39 Page

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    New Japan Radio Co., Ltd.
Part No. EMC5.0F-LC EMC8.0F-LC EMC3.3F-LC EMC15F-LC EMC12F-LC
Description Direct ProTek Replacement:EMC5.0F-LC
Two-Phase Multiphase Buck PwM Controller with integrated MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 24-QFN
1.2A integrated FETs, high Efficiency Synchronous Buck Regulator; Temperature Range: -40°C to 85°C; Package: 10-DFN
high Power LED Driver; Temperature Range: -25°C to 85°C; Package: 20-QFN
Automotive Grade TFT-LCD DC/DC with integrated Amplifiers; Temperature Range: -25°C to 85°C; Package: 32-TQFP
直接太克替代:EMC3.3F,立法会
Two-Phase Multiphase Buck PwM Controller with integrated MOSFET Drivers; Temperature Range: 0&degC to 70&deg;C; Package: 24-QFN 直接太克替代:EMC8.0F,立法会

File Size 111.67K  /  4 Page

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    SIC645

Vishay Siliconix
Part No. SIC645
Description 60 A VRPower Smart Power Stage (SPS) Module with integrated high-Accuracy Current and Temperature Monitors

File Size 402.18K  /  18 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM600HA-5F
Description high POwER SwITCHING USE INSULATED TYPE
integrated Gate Bipolar Transistor (IGBT) Modules: 250V

File Size 45.01K  /  4 Page

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    CM600HN-5F

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM600HN-5F
Description integrated Gate Bipolar Transistor (IGBT) Modules: 250V
high POwER SwITCHING USE INSULATED TYPE

File Size 65.59K  /  4 Page

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    MIC2514 MIC2514BM5

MICREL[Micrel Semiconductor]
Micrel Semiconductor,Inc.
Part No. MIC2514 MIC2514BM5
Description IttyBitty?/a> integrated high-Side Switch Preliminary Information
IttyBitty⑩ integrated high-Side Switch Preliminary Information
IttyBitty integrated high-Side Switch Preliminary Information
SwITCH SLIDE SPDT SILVR 5A RTANG
IttyBittyintegrated high-Side Switch Preliminary Information

File Size 44.77K  /  5 Page

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    MRFIC0917

MOTOROLA[Motorola, Inc]
Part No. MRFIC0917
Description 900 MHz GSM CELLULAR integrated POwER AMPLIFIER GaAs MONOLITHIC integrated CIRCUIT

File Size 165.89K  /  10 Page

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    MRFIC0913

Motorola, Inc
Part No. MRFIC0913
Description 900 MHz GSM CELLULAR integrated POwER AMPLIFIER GaAs MONOLITHIC integrated CIRCUIT

File Size 138.01K  /  8 Page

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    MAXIM - Dallas Semiconductor
Part No. MAX2082 MAX2082CXD MAX2082CXDw MAX2082EVKIT
Description Low-Power, high-Performance Octal Ultrasound Transceiver with integrated AFE, Pulser, T/R Switch, and CwD Beamformer

File Size 1,681.76K  /  71 Page

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