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  length-0.81 Datasheet PDF File

For length-0.81 Found Datasheets File :: 9893    Search Time::1.578ms    
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    ATF-21170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21170
OCR Text ...e has a nominal 0.3 micron gate length with a total gate periphery of 750 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 70 mil Package Description The ATF-21170 is a high p...
Description 0.5-6 GHz Low Noise Gallium Arsenide FET

File Size 41.90K  /  3 Page

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    ATF-21186 ATF-21186-STR ATF-21186-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text ...e has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 750 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. ATF-21186 ...
Description 0.5-6 GHz General Purpose Gallium Arsenide FET

File Size 67.13K  /  8 Page

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    ATF-25570

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25570
OCR Text ...e has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 70 mil Pac...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

File Size 39.81K  /  3 Page

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    ATF-25735

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-25735
OCR Text ...e has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 35 micro-X...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

File Size 41.61K  /  4 Page

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    ATF-26836 ATF-26836-STR ATF-26836-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-26836 ATF-26836-STR ATF-26836-TR1
OCR Text ...e has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25...
Description 2-16 GHz General Purpose Gallium Arsenide FET

File Size 42.07K  /  4 Page

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    ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884
OCR Text ...e has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 84 Plastic Package Description The ATF-26884 is a hi...
Description 2-16 GHz General Purpose Gallium Arsenide FET

File Size 39.76K  /  4 Page

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    ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text ...e has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold based metalization systems and nitride passivation assure rugged, reliable devices. 5965-8726E 0.4 0 0 4 8 12 16 ...
Description 1.5-18GHz surface mount pseudomorphic HEMT
2-18 GHz Ultra Low Noise Pseudomorphic HEMT

File Size 41.62K  /  4 Page

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    ATF-36163 ATF-36163-BLK ATF-36163-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text ...e has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold-based metallization system and nitride passivation assure rugged, reliable devices. 36 5-79 5965-4747E ATF-36163 Absolute Maxim...
Description 1.5-18 GHz Surface Mount Pseudomorphic HEMT

File Size 84.64K  /  10 Page

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    ATF-44101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-44101
OCR Text .... This nominally .5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source finger...0 V Pinch-off Voltage: VDS = 2.5 V, IDS = 25 mA f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 6.0 GHz f = ...
Description 2-8 GHz Medium Power Gallium Arsenide FET

File Size 60.35K  /  3 Page

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    ATF-45101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45101
OCR Text ... This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 2.5 millimeters. Proven gold based metallization systems and nitride passi...
Description 2-8 GHz Medium Power Gallium Arsenide FET

File Size 40.00K  /  3 Page

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