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For lowest-power Found Datasheets File :: 16623 Search Time::4.25ms
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				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	...ighest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	...ighest power capability and the lowest possible onresistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typ...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text	...ighest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typi...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	...ighest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typi...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text	...ighest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typ...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	...ighest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	L6932D1.2 L6932D1.2TR L6932D2.5TR L6932D1.8T L6932D25TR L6932 L6932D1.8 L6932D1.8TR L6932D12 L6932D12TR L6932D18 L6932D18TR L6932D2.5 L6932D25
OCR Text	...ultilayer ceramic caps have the lowest ESR and can be required for particular applications. Nevertheless in several applications they are ok...power dissipated by the device is given by: PDISS = (VIN - VOUT) * IOUT The thermal resistance junct...
Description	HIGH PERFORMANCE 2A ULDO LINEAR REGULATOR 高性能甲ULDO线性稳压器 HIGH PERFORMANCE 2A ULDO LINEAR REGULATOR
File Size	354.44K / 10 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics 意法半导
Part No.	M2732A 2377 M2732A-20F1 M2732A-2F6 M2732A-3F1 M2732A-4F1 M2732A-4F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-20F6 M2732A-25F1 M2732A-25F6 M2732A-3F6
OCR Text	...control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. To most efficiently use these two control lines, it is recommended that E be decoded and used as the ...
Description	NMOS 32K (4K x 8) UV EPROM, 250ns From old datasheet system NMOS 32K 4K x 8 UV EPROM NMOS 32K (4K x 8) UV EPROM(NMOS 32K紫外线擦除EPROM)
File Size	91.33K / 9 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] N.A. ST Microelectronics
Part No.	M2764A M2764A-2F1 M2764A-3F1 M2764AF1 M27256F6 M27256-1F1 M27256-1F6 M27256-20F1 M27256-20F6 M27256-25F1 M27256-25F6 M27256-2F1 M27256-2F6 M27256-3F1 M27256-3F6 M27256-4F1 M27256-4F6 M27256F1
OCR Text	...ontrol function allows : a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 VSS 1 28 2 27 3 26 4 25 5 24 6 23 7 22 M2764A 21 8 20 ...
Description	NMOS 64K 8K x 8 UV EPROM NMOS4KK的8紫外线存储器 NMOS 256K 32K x 8 UV EPROM NMOS 64K (8K x 8) UV EPROM
File Size	107.86K / 10 Page	View it Online	Download Datasheet

For lowest-power Found Datasheets File :: 16623 Search Time::4.25ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |