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  mcus - electrostatic discharge Datasheet PDF File

For mcus - electrostatic discharge Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    NNCD5.1G NNCD5.6G NNCD27G NNCD6.2G NNCD6.8G NNCD4.3G NNCD4.7G NNCD7.5G NNCD3.3G NNCD3.6G NNCD3.9G

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NNCD5.1G NNCD5.6G NNCD27G NNCD6.2G NNCD6.8G NNCD4.3G NNCD4.7G NNCD7.5G NNCD3.3G NNCD3.6G NNCD3.9G
Description electrostatic discharge NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD 静电放电噪声裁剪二极管季刊类型:共阳针迷你模
静电放电噪声裁剪二极管季刊类型:共阳5针迷你模

File Size 38.16K  /  8 Page

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    NNCD5.6LG NNCD6.2LG NNCD6.8LG

NEC, Corp.
NEC Corp.
Part No. NNCD5.6LG NNCD6.2LG NNCD6.8LG
Description LOW CAPACITANCE TYPE electrostatic discharge NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD 低电容式静电放电噪声裁剪二极管季刊类型:共阳针迷你模

File Size 45.47K  /  8 Page

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    NEC Corp.
NEC[NEC]
Part No. NSAD500F
Description electrostatic discharge SURGE ABSORBER DEVICES DUAL TYPE: COMMON ANODE SC-59 PACKAGE
Prevention of ESD and surge for high-speed interface(USB 2.0, IEEE1394,or 100B)

File Size 30.94K  /  5 Page

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    NEC[NEC]
Part No. NSAD500H
Description Prevention of ESD and surge for high-speed interface(USB2.0, IEEE1394, or 100B)
electrostatic discharge SURGE ABSORBER DEVICES QUAD TYPE: COMMON ANODE SC-88A PACKAGE

File Size 30.71K  /  5 Page

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    DF3A6.8LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.8LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD).

File Size 119.34K  /  3 Page

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    DF3A8.2FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD)

File Size 170.37K  /  3 Page

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    DF3A3.6FE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.6FE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.37 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD).

File Size 150.59K  /  3 Page

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    DF3A6.2LFE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2LFE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD).

File Size 138.76K  /  3 Page

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    DF2S8.2S

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S8.2S
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD).

File Size 115.34K  /  3 Page

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    DF3A3.6FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.6FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against electrostatic discharge (ESD).

File Size 148.32K  /  3 Page

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