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Spansion, Inc. SPANSION LLC
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Part No. |
S29GL032N90FAI033 S29GL032N90BAI043 S29GL032N70TAIR20 S29GL032N90TAIR23 S29GL032N70FFIR22 S29GL032N70TFIR30
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Description |
64 megabit, 32 megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA64 64 megabit, 32 megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PDSO56 2M X 16 FLASH 3V PROM, 90 ns, PDSO56 2M X 16 FLASH 3V PROM, 70 ns, PBGA64 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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File Size |
2,208.18K /
77 Page |
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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Part No. |
AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F020A-200FCB AM28F020A-70FC AM28F020A-150EC AM28F020A-70EC AM28F020A-90ECB AM28F020A-70FE AM28F020A-70FEB AM28F020A-90FE AM28F020A-90FEB AM28F020A-150FEB AM28F020A-150ECB AM28F020A-70ECB AM28F020A-120ECB AM28F020A-120JCB AM28F020A-120EIB AM28F020A-200EEB AM28F020A-120PCB AM28F020A-120EEB AM28F020A-200EIB AM28F020A-120JEB AM28F020A-120JIB AM28F020A-120PIB AM28F020A-120FEB AM28F020A-120PEB AM28F020A-120FIB AM28F020A-90PEB AM28F020A-90EEB AM28F020A-90EI AM28F020A-90EIB AM28F020A-200PCB AM28F020A-150JIB AM28F020A-70PCB AM28F020A-70EEB AM28F020A-150JC AM28F020A-200PIB AM28F020A-200JIB AM28F020A-200JEB AM28F020A-150PIB AM28F020A-90FCB AM28F020A-200EC AM28F020A-150JE AM28F020A-70JIB AM28F020A-200FIB
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Description |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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File Size |
244.09K /
35 Page |
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http:// Maxwell Technologies, Inc
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Part No. |
28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C010TRT2DI-20 28C010TRPDE-15 28C010TRPDE-12 28C010TRPDB-15 28C010TRT4DB-15 28C010TRT4DE-12 28C010TRT4DE-15 28C010TRT4DS-15 28C010TRT4DB-20 28C010TRT4FB-12 28C010TRT4FE-12 28C010TRT4FE-15 28C010TRT4DI-12 28C010TRT4DS-12 28C010TRT4FI-15 28C010TRT4FS-15 28C010TRT4FI-12 28C010TRTDB-15 28C010TRTDE-15 28C010TRTFE-12 28C010TRTFB-12 28C010TRTFS-15 28C010TRTFB-15 28C010TRTFI-12 28C010TRPFE-20 28C010TRPDB-12 28C010TRT1FS-20 28C010TRT1FI-12 28C010TRT2FI-15 28C010TRPFI-15 28C010TRPFI-12 28C010TRT2DE-15 28C010TRT1FI-20 28C010TRT4DI-20 28C010TRT1FB-15 28C010TRT2DE-20 28C010TRT2DB-15 28C010TRT2DB-20 28C010TRT2DS-20 28C010TRPFS-12 28C010TRTFE-15 28C010TRTFE-20 28C010TRT2FS-12
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Description |
1 megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECTOR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
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File Size |
356.86K /
19 Page |
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Advanced Micro Devices, Inc. http://
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Part No. |
AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB AM29DL800BT70WBC AM29DL800BT70WBCB AM29DL800BT120WBCB AM29DL800BB90WBI AM29DL800BT90WBI AM29DL800BB90EE AM29DL800BB90EI AM29DL800BB90FC AM29DL800BB120FIB AM29DL800BT120FI AM29DL800BT70SI AM29DL800BT90SCB AM29DL800BB120SIB AM29DL800BB90EEB AM29DL800BB120FCB AM29DL800BB120SEB AM29DL800BB120FE
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Description |
8 megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 8 megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48 8 megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 8 megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只,同时作业快闪记忆
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File Size |
300.13K /
43 Page |
View
it Online |
Download Datasheet
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Price and Availability
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