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    FSAM20SH60A

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FSAM20SH60A
OCR Text ...= VBS = 13.5 ~ 16.5V TJ = 125C, Non-repetitive, less than 6s TC TSTG VISO 60Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat-sink Plate Note Fig.2 Rating 400 -20 ~ 100 -50 ~ 150 2500 Unit V C C Vrms (c)2002 Fairchild Semiconductor Co...
Description 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
SPMTM (Smart Power Module)

File Size 971.53K  /  17 Page

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    FSAM20SL60

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FSAM20SL60
OCR Text ... = VBS = 13.5 ~ 16.5V TJ = 25C, Non-repetitive, less than 6s TC TSTG VISO 60Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat-sink Plate Note Fig.2 Rating 400 -20 ~ 100 -20 ~ 125 2500 Unit V C C Vrms (c)2003 Fairchild Semiconductor Co...
Description SPMTM (Smart Power Module)

File Size 2,355.81K  /  16 Page

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    FSAM20SM60A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FSAM20SM60A
OCR Text ... = VBS = 13.5 ~ 16.5V TJ = 25C, Non-repetitive, less than 6s TC TSTG VISO 60Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat-sink Plate Note Fig.2 Rating 400 -20 ~ 100 -20 ~ 125 2500 Unit V C C Vrms (c)2003 Fairchild Semiconductor Co...
Description 20A, Smart Power Module (SPM)
SPMTM (Smart Power Module)

File Size 2,335.38K  /  16 Page

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    K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text ... Precharge standby current in non power-down mode ICC2NS Active standby current in power-down mode Active standby current in non power-down mode (One bank active) ICC3P ICC3PS ICC3N ICC3NS mA 7 5 5 30 20 mA mA mA Operating curren...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 107.61K  /  10 Page

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    K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text ... Precharge standby current in non power-down mode ICC2NS Active standby current in power-down mode ICC3P ICC3PS ICC3N ICC3NS mA 7 5 5 30 20 mA mA mA Active standby current in non power-down mode (One bank active) Operating cur...
Description 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 111.80K  /  11 Page

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    K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S28163

Samsung Electronic
Samsung semiconductor
Part No. K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text ...de Precharge standby current in non power-down mode Active standby current in power-down mode Active standby current in non power-down mode (One bank active) Operating current (Burst mode) Refresh current Self refresh current Symbol Burst l...
Description 128Mb F-die SDRAM Specification
128Mb E-die SDRAM Specification

File Size 142.11K  /  14 Page

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    K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL7

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text ...de Precharge standby current in non power-down mode Active standby current in power-down mode Active standby current in non power-down mode (One bank active) Operating current (Burst mode) Refresh current Self refresh current Symbol Burst l...
Description 128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格

File Size 143.50K  /  14 Page

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    K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K4S280832M-TC/L80 K4S280832M-TC/L10
OCR Text ... Precharge standby current in non power-down mode ICC2NS Active standby current in power-down mode ICC3P ICC3PS ICC3N ICC3NS mA 7 5 5 30 20 125 125 200 1.5 800 125 115 125 115 165 mA mA mA uA 1 2 3 4 mA mA mA Active standby curre...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL

File Size 124.69K  /  10 Page

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    K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text ... Precharge standby current in non power-down mode ICC2NS Active standby current in power- ICC3P CKE VIL(max), tCC = 10ns down mode ICC3PS CKE & CLK VIL(max), tCC = Active standby current in non power-down mode (One bank active) ICC3...
Description 128Mb SDRAM, 3.3V, LVTTL, 100MHz
2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP

File Size 62.82K  /  8 Page

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    K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text ... Precharge standby current in non power-down mode ICC2NS Active standby current in power-down mode Active standby current in non power-down mode (One bank active) ICC3P mA 7 5 5 30 20 mA mA ICC3PS CKE & CLK VIL(max), tCC = ICC3N I...
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 107.58K  /  10 Page

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For non-isolated Found Datasheets File :: 11521    Search Time::1.187ms    
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