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TOSHIBA
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| Part No. |
TB9060FNG
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| OCR Text |
...-phase winding wire positive on/off switching pin ? on: low, off: high 16 out_vp o v-phase upper turn-on signal output pin ? v-phase...time is set for t/2 by timer 2 based on the t cycle of timer 1. period during which an inductive vo... |
| Description |
Pre-driver for automobile
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| File Size |
255.89K /
20 Page |
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TOSHIBA
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| Part No. |
TB9004FNG
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| OCR Text |
... the both power outputs turned off, the tb9004fng consumes 0 a. features ? power output v cc1 - output voltage: 3.4 v 0.10 v/2...time = 5 seconds ? the number of times = once ? use of r-type flux (2) use of sn-3.0ag-0.... |
| Description |
Automobile CPU dual regulator, built-in watchdog timer
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| File Size |
298.18K /
17 Page |
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it Online |
Download Datasheet |
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SL
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| Part No. |
SVF2N60F SVF2N60D SVF2N60T
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| OCR Text |
...se time t r -- 23.4 -- turn-off delay time t d(off) -- 15.3 -- turn-off fall time t f v dd =300v,i d =2.0a, r g =25 (note 2,3) -- 20.1 -- ns total gate charge q g -- 5.67 -- gate-source charge q gs... |
| Description |
600V N-CHANNEL MOSFET
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| File Size |
591.29K /
10 Page |
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it Online |
Download Datasheet |
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Silan Microelectronics
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| Part No. |
SVD8N80T
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| OCR Text |
...e time t r -- 76 240 turn-off delay time t d(off) -- 82.2 135 turn-off fall time t f v dd =400v,i d =8.0a, r g =25 (note 2,3) -- 43.8 145 ns total gate charge q g -- 32.2 45 gate-source... |
| Description |
800V N-CHANNEL MOSFET
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| File Size |
560.64K /
8 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STT626
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| OCR Text |
... 61 12 t d(on) 25 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =30v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
132.34K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STT622S
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| OCR Text |
...0 14.5 t d(on) 12 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =30v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
131.94K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STT468A
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| OCR Text |
...0 126 t d(on) 1.5 ns t r ns t d(off) ns t f ns v ds =20v,v gs =0v switching characteristics v dd =20v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =1.1... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
124.86K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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