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per-channel Datasheet PDF File

For per-channel Found Datasheets File :: 47318 Search Time::2.156ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS6680S
OCR Text	...on are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other opti...
Description	30V N-Channel PowerTrench SyncFET⑩
File Size	220.76K / 9 Page	View it Online	Download Datasheet

				Maxim Integrated Products INTERSIL[Intersil Corporation]
Part No.	ICM7211 ICM7211ALM44 ICM7211ALPL ICM7211AMLM44 ICM7211AMLPL ICM7211LPL ICM7211MLPL ICM7212 ICM7212AMLPL FN3158
OCR Text	...plexed Direct LED Drive at >5mA Per Segment * Brightness Input Allows Direct Control of LED Segment Current with a Single Potentiometer or D...Channel and P-Channel devices ratioed to provide identical on resistances, and thus equal rise and f...
Description	4-Digit, ICM7211 (LCD) and ICM7212 (LED) Display Drivers 4-Digit, ICM7211 (LCD) and ICM7212 (LED) Display Drivers From old datasheet system
File Size	82.51K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	...eve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEX...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...eve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEX...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	...eve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEX...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	...eve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEX...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1104
OCR Text	...eve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEX...Channel HEXFETS www.irf.com 7 IRF1104 Package Outline TO-220AB Outline Dimensions are sho...
Description	Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?
File Size	97.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302L IRF1302S
OCR Text	...eve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switchi...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reve...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
File Size	225.99K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302
OCR Text	...eve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switchi...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)
File Size	516.95K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310NL IRF1310NS
OCR Text	...eve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEX...Channel HEXFETS IRF1310NS/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 )...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	152.94K / 10 Page	View it Online	Download Datasheet

For per-channel Found Datasheets File :: 47318 Search Time::2.156ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |