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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K9F5608U0M-YCB0 K9F5608U0M-YIB0
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OCR Text |
...eset command(ffh) is written at ready state, the device goes into busy for maximum 5us. draft date april. 10th 1999 july. 23th 1999 sep. 15th 1999 mar. 21th 2000 apr. 7th 2000 apr. 29th 2000 july 17th 2000 nov. 20th 2000
k9f5608u0m-y... |
Description |
32M x 8 Bit NAND Flash Memory
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File Size |
355.87K /
26 Page |
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it Online |
Download Datasheet |
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Integrated Silicon Solution Inc
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Part No. |
IS75V16F128GS32-7065BI
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OCR Text |
...of the program or erase cycle ready-busy outputs (ry/ by ) detection of program or erase cycle completion for each flash chip over 100,000 write/erase cycles low supply voltage (vccf 2.5v) inhibits writes wp /acc input pin: if v ... |
Description |
3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
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File Size |
263.13K /
52 Page |
View
it Online |
Download Datasheet |
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Toshiba
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Part No. |
TC58NS512ADC
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OCR Text |
...ress latch enable Write protect ready/busy Ground input Low Voltage Detect Power supply Ground
TM
1
2
3
4
5
6
7
8
9 10 11
RY/BY GND LVD
22 21 20 19 18 17 16 15 14 13 12
VCC VSS
VCC
CE
RE
RY/BY GN... |
Description |
512 MBit CMOS NAND EPROM
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File Size |
512.31K /
44 Page |
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it Online |
Download Datasheet |
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Toshiba
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Part No. |
TC58NS256BDC
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OCR Text |
...ress latch enable Write protect ready/busy Ground Input Low Voltage Detect Power supply Ground
TM
1
2
3
4
5
6
7
8
9 10 11
RY/BY GND LVD
22 21 20 19 18 17 16 15 14 13 12
VCC VSS
VCC
CE
RE
RY/B... |
Description |
256 MBit CMOS NAND EPROM
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File Size |
412.54K /
34 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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