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For samsungs Found Datasheets File :: 418    Search Time::1.235ms    
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    K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB10 K6T4016U3C-RB70 K6T4016U3C-RB85 K6T4016U3C-RF10 K6T4016U3C-RF70 K6T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB10 K6T4016U3C-RB70 K6T4016U3C-RB85 K6T4016U3C-RF10 K6T4016U3C-RF70 K6T4016U3C-RF85 K6T4016U3C-TB10 K6T4016U3C-TB70 K6T4016U3C-TB85 K6T4016U3C-TF10 K6T4016U3C-TF70 K6T4016U3C-TF85 K6T4016V3C K6T4016V3C-B K6T4016V3C-F K6T4016V3C-RB10 K6T4016V3C-RB70 K6T4016V3C-RB85 K6T4016V3C-RF10 K6T4016V3C-RF70 K6T4016V3C-RF85 K6T4016V3C-TB10 K6T4016V3C-TB55 K6T4016V3C-TB70 K6T4016V3C-TB85 K6T4016V3C-TF10 K6T4016V3C-TF70 K6T4016V3C-TF85
OCR Text ...6U3C families are fabricated by samsungs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data re...
Description    256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Surface Mount Resistors Thick Film Chip Resistors
256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM

File Size 154.01K  /  9 Page

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    K7M801825B K7M803625B DSK7M803625B K7M801825B-QC65_75 K7M803625B-QC65_75 K7N803649B-QC25 K7N801801B-QC16_13 K7N801809B-Q

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7M801825B K7M803625B DSK7M803625B K7M801825B-QC65_75 K7M803625B-QC65_75 K7N803649B-QC25 K7N801801B-QC16_13 K7N801809B-QC25 K7N801845B-QC16_13 K7N801849B-QC25 K7N803601B-QC16_13 K7N803609B-QC25 K7N803645B-QC16_13 K7N801801B-QC16/13 K7N801845B-QC16/13 K7N803601B-QC16/13 K7M801825B-QC65/75 K7M803625B-QC65/75 K7N803645B-QC16/13
OCR Text ...K7M801825B are implemented with samsungs high performance CMOS technology and is available in 100pin TQFP and Multiple power and ground pins minimize ground bounce. * 3.3V+0.165V/-0.165V Power Supply. * I/O Supply Voltage 3.3V+0.165V/-0.165...
Description COMPUTER PRODUCT 256Kx36
256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36
Connector assemblies, Audio/RF/Video cables;
DELUX AUDIO RIGHT ANGLE CABLE
256Kx36 & 512Kx18-Bit Flow Through NtRAM

File Size 372.35K  /  18 Page

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    K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 K7A203600B-QC14 DSK6X8016C3B K6X8016C3B DS_K6X8016C3B K7A203200B-QC_I1

Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 K7A203600B-QC14 DSK6X8016C3B K6X8016C3B DS_K6X8016C3B K7A203200B-QC_I14 K7A203600B-QC_I14
OCR Text ...6C3B families are fabricated by samsungs advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery...
Description 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM

File Size 128.86K  /  9 Page

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    K7A203600 K7A203600A K7A203600B-QCI14

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K7A203600 K7A203600A K7A203600B-QCI14
OCR Text ... K7A203600A is fabricated using samsungs high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Time Clock Acc...
Description 64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999)
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM

File Size 411.94K  /  15 Page

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    K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N401809B-QC20 K7N401801B K7N401801B-QC13

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N401809B-QC20 K7N401801B K7N401801B-QC13
OCR Text ...K7N401801B are implemented with samsungs high performance CMOS technology and is available in 100pin TQFP packages. Multiple power and ground pins minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Time Clock Access Time Output E...
Description 128Kx36 & 256Kx18 Pipelined NtRAMTM
256 Megabit, 3.0 Volt-only Page Mode Flash Memory
128Kx36 & 256Kx18 Pipelined NtRAM 128K × 36

File Size 383.87K  /  18 Page

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    KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM68257EI-10 KM68257EI-12 KM68257EI-15 KM68257ETGI-10 KM68257ETGI-12 KM6825

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM68257EI-10 KM68257EI-12 KM68257EI-15 KM68257ETGI-10 KM68257ETGI-12 KM68257ETG-15
OCR Text ... The device is fabricated using samsungs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM68257E is packaged in a 300mil 28-pi...
Description 32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作),在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns

File Size 165.73K  /  8 Page

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    DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D-QC50

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D-QC50
OCR Text ...rds by 32 bits, fabricated with samsungs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of o...
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

File Size 236.21K  /  18 Page

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    K4D263238F K4D263238F-QC40 K4D263238F-QC50

Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
Part No. K4D263238F K4D263238F-QC40 K4D263238F-QC50
OCR Text ...rds by 32 bits, fabricated with samsungs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of o...
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR SDRAM
From old datasheet system

File Size 235.10K  /  17 Page

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    K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
OCR Text ...rds by 32 bits, fabricated with samsungs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.8GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of o...
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

File Size 280.12K  /  19 Page

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    KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 KM416S1120DT-G_F7 KM416S1120DT-G_F8 KM416S1120DT-G_FC KM416S1120DT-GF10

ETC[ETC]
Samsung semiconductor
Part No. KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 KM416S1120DT-G_F7 KM416S1120DT-G_F8 KM416S1120DT-G_FC KM416S1120DT-GF10 KM416S1120DT-GF6 KM416S1120DT-GF7 KM416S1120DT-GF8 KM416S1120DT-GFC KM416S1120DT-G/F7 KM416S1120DT-G/FC KM416S1120DT-G/F10 KM416S1120DT-G/F8
OCR Text ...rds by 16 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, prog...
Description 512K x 16bit x 2 Banks Synchronous DRAM LVTTL

File Size 1,126.95K  /  43 Page

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For samsungs Found Datasheets File :: 418    Search Time::1.235ms    
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