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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
BF1005R BF1005W BF1005
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OCR Text |
... = 4 V, f = 100 MHz Power gain (self biased) VDS = 5 V, V G2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, V G2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, V G2S = 4V ...0V, f = 800 GHz Values typ. max. Unit
3
Feb-18-2004
BF100... |
Description |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
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File Size |
249.77K /
5 Page |
View
it Online |
Download Datasheet |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
BF1005SR BF1005SW BF1005S
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OCR Text |
... = 4 V, f = 100 MHz Power gain (self biased) VDS = 5 V, V G2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, V G2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, V G2S = 4 V ... 0 V, f = 800 MHz G p 40 50 F 1.6 2.1 dB Gp 20 22 dB Cdss 1.3 Cg1... |
Description |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
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File Size |
250.10K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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