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  sot-227b Datasheet PDF File

For sot-227b Found Datasheets File :: 102    Search Time::1.187ms    
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    IXFN26N120P

IXYS Corporation
Part No. IXFN26N120P
OCR Text ...lb.in. Nm/lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used a...227B Outline Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 13A RG = 1 (External) ...
Description Polar Power MOSFET

File Size 104.68K  /  4 Page

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    IXFN36N110P

IXYS Corporation
Part No. IXFN36N110P
OCR Text ...lb.in. Nm/lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used a...227B Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) IS ...
Description Polar Power MOSFET HiPerFET

File Size 106.00K  /  4 Page

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    IXFN82N60P

IXYS Corporation
Part No. IXFN82N60P
OCR Text ...C C V~ V~ lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used a...227B Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS = 20 V; ID...
Description PolarHV HiPerFET Power MOSFET

File Size 144.65K  /  5 Page

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    IXFN32N120P

IXYS Corporation
Part No. IXFN32N120P
OCR Text ...W C/W (M4 screws (4x) supplied) sot-227b (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF ...
Description Polar HiPerFET Power MOSFET

File Size 115.18K  /  5 Page

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    IXFE180N20

IXYS Corporation
Part No. IXFE180N20
OCR Text ...250 ns features ? conforms to sot-227b outline  low r ds (on) hdmos tm process  rugged polysilicon gate cell structure  unclamped inductive switching (uis) rated  low package inductance  fast intrinsic rectifier  encapsulating ...
Description HiPerFET Power MOSFETs Single Die MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 516.46K  /  2 Page

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    IXYS
Part No. IXFE24N100 IXFE23N100
OCR Text ...ta sheet features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-d...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 651.54K  /  2 Page

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    IXYS
Part No. IXFE36N100 IXFE34N100
OCR Text ...ta sheet features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-d...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 651.51K  /  2 Page

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    IXFE39N90

IXYS Corporation
Part No. IXFE39N90
OCR Text ...? t < ns features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-d...
Description HiPerFET Power MOSFETs Single Die MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 113.58K  /  2 Page

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    IXYS
Part No. IXFE44N50Q IXFE48N50Q
OCR Text ... 250 ns features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-d...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 549.94K  /  4 Page

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    IXYS
Part No. IXFE50N50 IXFE55N50
OCR Text ...trinsic rectifier ? conforms to sot-227b outline applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space saving...
Description HiPerFETTM Power MOSFET 50 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 526.06K  /  2 Page

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