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For u-mos-h Found Datasheets File :: 3886 Search Time::1.969ms
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				ONSEMI[ON Semiconductor]
Part No.	MC14585B MC14585BCP MC14585BD MC14585BDR2 MC14585BF
OCR Text	...2 11 10 9 VDD A3 B3 (A (A u B)in (A t B)in (A = B)in A1 VSS (A = B)out u B)out (A t B)out B0 A0 B1 BLOCK DIAGRAM 4 6 5 10 11 7 9 2 1 15 14 (A > B)in (A = B)in (A < B)in A0 B0 A1 B1 A2 B2 A3 B3 (A > B)out 13 (A =...
Description	4-Bit Magnitude Comparator
File Size	160.80K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc ON Semi
Part No.	MC3399 MC3399DW MC3399T ON1080
OCR Text	...GE CASE 314D-03 ISSUE D -T- -Q- U A L 12345 DIM A B C D E G H J K L Q U S SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION D DOES NOT INCLUDE INTERCONNECT BAR (DAMBAR)...
Description	AUTOMOTIVE HALF-AMP HIGH-SIDE SWITCH From old datasheet system
File Size	82.65K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TA8493AF TA8493F TA8493BF
OCR Text	...Min 3/4 Typ. Max Unit W RON (U) 0.5 1.0 Output Circuit IL (U) 10 mA VCC V 3/4 3/4 5 VCC - 0.5 3/4 3.0 3/4 3/4 3/4 3/...MOS transistors (2SJ465), which give high torque efficiency. VM (coil current) Lower Pw Tr.: ON ...
Description	3-PHASE FULL WAVE BRUSHLESS DC MOTOR DRIVER IC FOR CD-ROM DRIVES
File Size	247.49K / 25 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	74ABT821 74ABT821D 74ABT821DB 74ABT821N 74ABT821PW 74ABT821PWDH
OCR Text	...(V) PULSE GENERATOR VIN D.U.T. RT VOUT Test Circuit for 3-State Outputs VM SWITCH POSITION TEST tPLZ tPZL All other SWITCH closed closed open VM = 1.5V Input Pulse Definition DEFINITIONS RL = Load resistor; see AC ...
Description	positive-edge trigger (3-State) 10-bit D-type flip-flop; positive-edge trigger 3-State
File Size	68.85K / 6 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JFLL
OCR Text	...by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 Gate 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.49K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 Gate 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	...by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 Gate 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	...by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 "UL Recognized" File No. E145592 5,262,336 5,528,058
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 "UL Recognized" File No. E145592 5,262,336 5,528,058
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

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