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  v 400v Datasheet PDF File

For v 400v Found Datasheets File :: 14240    Search Time::4.75ms    
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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JvRU3
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS v 500v 44A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5010JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
Part No. APT5010JvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS v 500v 44A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kvDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94v-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS v是一个高电压N新一代通道增强型功率MOSFET

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    APT5010LLC APT5010B2LC APT5010B2LC-06

Advanced Power Technolo...
Advanced Power Technology Ltd.
Part No. APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text ...DRAIN CURRENT (AMPERES) 1.5 v GS 140 120 100 80 60 NORMALIZED TO = 10v @ 0.5 I [Cont.] D TJ = +25C TJ = +125C vDS> ID (ON) x...400v 8 10 5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE...
Description 47 A, 500 v, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS vITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS vI 500v 47A 0.100 Ohm

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    APT5010LVFR APT20M22LVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LvFR APT20M22LvFR
OCR Text v (R) FREDFET TO-264 Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology...400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS v是一个高电压N新一代通道增强型功率MOSFET
POWER MOS v 500v 47A 0.100 Ohm

File Size 66.12K  /  4 Page

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    APT5010LVR

Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS v是一个高电压N新一代通道增强型功率MOSFET
POWER MOS v 500v 47A 0.100 Ohm

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    APT5012 APT5012WVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5012 APT5012WvR
OCR Text v (R) TO-267 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the J...400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS v 500v 40A 0.120 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5014B2VR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5014B2vR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 1 0.5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GA...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS v 500v 37A 0.140 Ohm

File Size 61.78K  /  4 Page

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    APT5014LVR

ADPOW[Advanced Power Technology]
Part No. APT5014LvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 1 0.5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GA...
Description POWER MOS v 500v 37A 0.140 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.64K  /  4 Page

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    APT5015 APT5015BVR

ADPOW[Advanced Power Technology]
Part No. APT5015 APT5015BvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES...
Description POWER MOS v 500v 32A 0.150 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5017BVFR

ADPOW[Advanced Power Technology]
Part No. APT5017BvFR
OCR Text v (R) FREDFET TO-247 Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology...400v 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES...
Description POWER MOS v 500v 30A 0.170 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.45K  /  4 Page

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