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A2982SL AD588 AC1586 9NK65ZFP UAF110RA BRF4801 24002 0515S
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  0.112a Datasheet PDF File

For 0.112a Found Datasheets File :: 83    Search Time::1.875ms    
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    PH965C6

FUJI[Fuji Electric]
Part No. PH965C6
OCR Text ... Molding resin Epoxy resin UL:V-0 (4) Characteristics is shown MS5D1444 10/12~12/12 4. RATINGS 4.1 MAXIMUM RATINGS ITEM Repetitive peak reve...112A B-121A test code C 22 22 Endurance test B-122A test code C 22 (0:1) B-123A test...
Description SPECIFICATION

File Size 273.97K  /  12 Page

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    Shanghai Belling
Part No. BL0955
OCR Text ...Hz/60 Hz IEC 687/1036 Less than 0.1% Error Over a Dynamic Range of 500 to 1 .The BL0955 Supplies Average Real Power on the Frequency Outputs...112a C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . ....
Description Single Phase Energy Metering IC

File Size 830.46K  /  31 Page

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    IRFM140 2N7218

Seme LAB
Part No. IRFM140 2N7218
OCR Text ...) 100V 20V 28A 20A 112A 100W 0.8W/C 250mJ 5.5V/ns -55 to +150C -55 to +150C THERMAL PROPERTIES Symbols RJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 1.25 Units C/W Notes (1) Repetitive Ratin...
Description N-CHANNEL POWER MOSFET

File Size 611.97K  /  3 Page

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    http://
FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. YG963S6R
OCR Text ... Molding resin Epoxy resin UL:V-0 (4) Characteristics is shown MS5D1437 10/12~12/12 4. RATINGS 4.1 MAXIMUM RATINGS ITEM Repetitive peak reve...112A B-121A test code C 22 22 Endurance test B-122A test code C 22 (0:1) B-123A test...
Description SILICON DIODE
IC AM29LV065 64 MBIT (8MX8) CMOS 3.0 VOLT UNIFORM SECTOR FLASH MEMORY

File Size 135.93K  /  12 Page

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    IPB80N06S4L-05 IPI80N06S4L-05 IPP80N06S4L-05

Infineon Technologies AG
Part No. IPB80N06S4L-05 IPI80N06S4L-05 IPP80N06S4L-05
OCR Text .../56 mJ A V W C Unit A Rev. 1.0 page 1 2009-03-24 IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 Parameter Symbol Conditions min....112A at 25C. Specified by design. Not subject to production test. 2) 3) Device on 40 mm x 40 m...
Description OptiMOS-T2 Power-Transistor

File Size 168.34K  /  9 Page

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    Crydom, Inc.
Part No. CHTB12-600
OCR Text ...= 3.3k ? tj = 150 ? c qi-ii-iii 0.15v i h max @ i t = 100 ma note 2 35ma i l max @ i g = 1.2 i gt qi-iii 50ma i l max @ i g = 1.2 i gt q-ii 80ma dv/dt min @ v d = 67%v drm (gate open) note 2 tj = 150?c 300v/? (di/dt)c min without snubber ...
Description TRIAC ALTERNIST 12A 600V TO220AB 600 V, 12 A, ALTERNISTOR TRIAC, TO-220AB

File Size 62.48K  /  2 Page

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    2SJ591 2SJ591LS

SANYO[Sanyo Semicon Device]
Part No. 2SJ591 2SJ591LS
OCR Text ...unit : mm 2078C [2SJ591LS] 10.0 3.2 4.5 2.8 Low ON-resistance. 4V drive. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 123 ...112A ID= --28A 10 DC Op --10 Drain Current, ID -- A --8 3 2 --10 7 5 3 2 --1.0 7 5 3 2...
Description P-Channel Silicon MOSFET DC / DC Converter Applications

File Size 32.20K  /  4 Page

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    Crydom Corporation
Part No. CHTA12
OCR Text ...= 3.3k ? tj = 150 ? c qi-ii-iii 0.15v i h max @ i t = 100 ma note 2 35ma i l max @ i g = 1.2 i gt qi-iii 50ma i l max @ i g = 1.2 i gt q-ii 80ma dv/dt min @ v d = 67%v drm (gate open) note 2 tj = 150?c 300v/? (di/dt)c min without snubber ...
Description High Temperature Triacs

File Size 91.93K  /  2 Page

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    Fuji Electric Holdings Co., Ltd.
Part No. 2SK3513-01S
OCR Text ... voltage v gs (th) v ds =v gs 3.0 - 5.0 v zero gate voltage v ds =600v vgs=0v t ch =25 c- - 25 drain current i dss vds=480v v gs =0v t ch =...112a 22 storage test duration : 1000hr 3 temperature temperature : 852c b-121a humidity relative hu...
Description STD LQg MOSFET MOSFET的性病的LQG

File Size 206.57K  /  21 Page

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