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  100-1600 Datasheet PDF File

For 100-1600 Found Datasheets File :: 18700    Search Time::1.859ms    
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    SANYO[Sanyo Semicon Device]
Part No. CPH3004
OCR Text ...ain SANYO : CPH3 Ratings 9 6 2 100 600 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collector C...1600 1800 2000 2200 2400 2600 2800 3000 0.947 0.889 0.761 0.661 0.596 0.552 0.529 0.513 0.500 0.490 ...
Description Ultrahigh-Frequency Transistors
High-Frequency Medium-Power Amplifier Applications

File Size 38.38K  /  7 Page

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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APTDF400KK60 APTDF400KK60G
OCR Text ... Typ 34 160 220 1.16 6.12 20 52 100 11.6 176 Max Unit ns ns C A ns C A IF = 400A VR = 400V di/dt = 800A/s Tj = 125C Thermal ...1600 2400 3200 4000 4800 -diF/dt (A/s) 200 A T J=-55C QRR, Reverse Recovery Charge (C) IRR...
Description Dual Common Cathode diodes Power Module 500 A, 600 V, SILICON, RECTIFIER DIODE

File Size 236.05K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTDF400KK60G
OCR Text ... Typ 34 160 220 1.16 6.12 20 52 100 11.6 176 Max Unit ns ns C A ns C A IF = 400A VR = 400V di/dt = 800A/s Tj = 125C Thermal ...1600 2400 3200 4000 4800 -diF/dt (A/s) 200 A T J=-55C QRR, Reverse Recovery Charge (C) IRR...
Description Dual Common Cathode diodes Power Module

File Size 211.82K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTDF400KK20G
OCR Text ... 3 2 Typ Max 0.14 150 125 100 5 3.5 280 Unit C/W V C N.m g APTDF400KK20G - Rev 1 April, 2006 Operating junction temperature ran...1600 2400 3200 4000 4800 -diF/dt (A/s) IRRM vs. Current Rate of Charge T J=125C V R=133V 520 A 400 ...
Description Dual Common Cathode diodes Power Module

File Size 211.75K  /  4 Page

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    SPM-2045

STANFORD[Stanford Microdevices]
Part No. SPM-2045
OCR Text ...er Isolation LO Power = 17dBm 100 Isolation, dB RF-IF LO-RF 40 20 0 0 500 1000 1500 Frequency 2000 2500 3000 LO-IF Isolation, dB 100 80 60 40 20 0 1500 low side high side Half IF response IF=200MHz, PLO=20dBm, PRF=10dBm 80 60 17...
Description High Linearity Passive FET Mixer

File Size 192.45K  /  9 Page

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    SPP20N60CFD

INFINEON[Infineon Technologies AG]
Part No. SPP20N60CFD
OCR Text ... drain current T C = 25 C T C = 100 C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 10 A, V DD = 50 V Aval...1600 Tj = 125C 1500 1600 1400 Q rr Q rr 1500 1300 1200 1400 1100 1000 Tj = 25...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 164.33K  /  12 Page

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    SPW20N60CFD

INFINEON[Infineon Technologies AG]
Part No. SPW20N60CFD
OCR Text ... drain current T C = 25 C T C = 100 C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 10 A, V DD = 50 V Aval...1600 1500 1600 1400 Tj = 125C Qrr Qrr 1500 1300 1200 1400 1100 1000 Tj = 25C ...
Description Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
Cool MOS?/a> Power Transistor
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
for lowest Conduction Losses & fastest Switching

File Size 161.83K  /  12 Page

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    ZCOMM[Z-Communications, Inc]
Part No. CRO1600A
OCR Text ...l) -80 -90 (f) (dBc/Hz) -100 -110 -120 -130 -140 -150 1 E+3 FEATURES * Frequency Range: 1600 - 1600 MHz * Tuning Voltage: 2-10 Vdc * MINI-16 - Style Package APPLICATIONS * Digital Radio Equipment * Fixed Wireless Access * Satellit...
Description VOLTAGE CONTROLLED OSCILLATOR

File Size 69.46K  /  2 Page

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    椋???″????浣?涓??)??????
Part No. MRFE6P3300HR3
OCR Text ...20 w cw case temperature 79 c, 100 w cw case temperature 81 c, 60 w cw r jc 0.23 0.24 0.27 0.27 c/w 1. continuous use at maximum tempera...1600 madc, measured in functional test) v gs(q) 2 2.8 4 vdc drain - source on - voltage (v gs = 10 ...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 419.68K  /  12 Page

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