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  10mv dual n-channel matched mo Datasheet PDF File

For 10mv dual n-channel matched mo Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    BL-BG33V4V-1

Bright LED Electronics Corp.
Part No. BL-BG33V4V-1
Description 2mV dual P-Channel matched moSFET Pair, Enhancement mode, 8L PDIP
LED GaAsP/GaP Green Low current requirement.

File Size 144.05K  /  2 Page

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    ICE Components, Inc.
ICE COMPONENTS INC
Part No. LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1R0-RM LS1608-1R5-RM LS1608-3R3-RM LS1608-4R7-RM LS1608-2R2-RM LS1608-221-RM LS1608-6R8-RM LS1608-102-RM LS1608-471-RM LS1608-472-RM LS1608-330-RM LS1608-680-RM LS1608-150-RM LS1608-681-RM LS1608-151-RM
Description 5.0mV Quad n-channel EPAD matched moSFET Array, Enhancement mode, 16L PDIP, EPAD Enabled
Quad n-channel EPAD matched Pair moSFET Array, Vgs= -1.3 V, Depletion mode, 16L SOIC, EPAD Enabled
Quad n-channel EPAD matched Pair moSFET Array, Vgs= -3.5 V, Depletion mode, 16L PDIP, EPAD Enabled
Quad n-channel EPAD matched Pair moSFET Array, Vgs= -1.3 V, Depletion mode, 16L PDIP, EPAD Enabled
Quad n-channel EPAD matched Pair moSFET Array, Vgs= -0.4 V, Depletion mode, 16L SOIC, EPAD Enabled
5.0mV Quad n-channel EPAD matched moSFET Array, Enhancement mode, 16L SOIC, EPAD Enabled
Quad n-channel EPAD matched Pair moSFET Array, Vgs= -3.5 V, Depletion mode, 16L SOIC, EPAD Enabled
Surface mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad n-channel EPAD matched Pair moSFET Array, Vgs= -0.4 V, Depletion mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
dual n-channel EPAD matched Pair moSFET Array, Vgs= -0.4 V, Depletion mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad n-channel EPAD matched Pair moSFET Array, Vgs= -1.3 V, Depletion mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad n-channel EPAD matched Pair moSFET Array, Vgs= -0.4 V, Depletion mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD
dual n-channel EPAD matched Pair moSFET Array, Vgs= -0.4 V, Depletion mode, 8L SOIC, EPAD Enabled

File Size 504.01K  /  1 Page

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    ICE Components, Inc.
Part No. LS3316 LS3316-100-RM LS3316-470-RM LS3316-6R8-RM LS3316-3R3-RM LS3316-330-RM LS3316-4R7-RM LS3316-220-RM
Description 10.0mV dual P-Channel matched Pair moSFET Array, Enhancement mode, 8L PDIP
5.0mV dual n-channel EPAD matched moSFET Array, Enhancement mode, 8L PDIP, EPAD Enabled
5.0mV dual n-channel EPAD matched moSFET Array, Enhancement mode, 8L SOIC, EPAD Enabled
dual n-channel EPAD matched Pair moSFET Array, Vgs= 3.3 V, Enhancement mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface mount Power Inductors 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface mount Power Inductors 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface mount Power Inductors 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR, SMD

File Size 507.09K  /  1 Page

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    HUF76105DK8 FN4380 HUF76105DK8T

Intersil Corporation
Intersil, Corp.
Part No. HUF76105DK8 FN4380 HUF76105DK8T
Description 5A/ 30V/ 0.050 Ohm/ dual n-channel/ Logic Level UltraFET Power moSFET
From old datasheet system
5A, 30V, 0.050 Ohm, dual n-channel, Logic Level UltraFET Power moSFET
5A, 30V, 0.050 Ohm, dual n-channel,Logic Level UltraFET Power moSFET(5A, 30V, 0.050 Ω,双N沟道,逻辑电平,UltraFET功率moS场效应管)
TRANSISTOR | moSFET | matched PAIR | n-channel | 30V V(BR)DSS | 5A I(D) | SO 5 A, 30 V, 0.072 ohm, 2 CHANNEL, n-channel, Si, POWER, moSFET, MS-012AA

File Size 174.74K  /  12 Page

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    LT1002 LT1002A LT1002AC LT1002ACJ LT1002ACN LT1002AM LT1002AMJ LT1002C LT1002CJ LT1002CN LT1002M LT1002MJ 1002FA

LINER[Linear Technology]
Part No. LT1002 LT1002A LT1002AC LT1002ACJ LT1002ACN LT1002AM LT1002AMJ LT1002C LT1002CJ LT1002CN LT1002M LT1002MJ 1002FA
Description dual / matched Precision Operational Amplifier
dual, matched Precision Operational Amplifier
From old datasheet system

File Size 343.97K  /  16 Page

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    ALD[Advanced Linear Devices]
Part No. ALD110900SA ALD110800 ALD110800A ALD110800APC ALD110800ASC ALD110800PC ALD110800SC ALD110900 ALD110900A ALD110900APA ALD110900ASA ALD110900PA
Description    QUAD/dual n-channel ZERO THRESHOLD EPAD matched PAIR moSET ARRAY

File Size 35.09K  /  2 Page

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    ALD[Advanced Linear Devices]
Part No. ALD110902SA ALD110802 ALD110802PC ALD110802SC ALD110902 ALD110902PA
Description    QUAD/dual n-channel ENHANCEMENT moDE EPAD matched PAIR moSFET ARRAY

File Size 34.11K  /  2 Page

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    ALD212902PAL ALD212902SAL

Advanced Linear Devices
Part No. ALD212902PAL ALD212902SAL
Description    PRECISION n-channel EPAD moSFET ARRAY dual HIGH DRIVE NANOPOWER matched PAIR

File Size 108.97K  /  12 Page

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    ALD212904PAL ALD212904SAL

Advanced Linear Devices
Part No. ALD212904PAL ALD212904SAL
Description    PRECISION n-channel EPAD moSFET ARRAY dual HIGH DRIVE NANOPOWER matched PAIR

File Size 108.87K  /  12 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HP4936DY FN4469 HP4936DYT
Description 5.8A, 30V, 0.037 Ohm, dual n-channel,Logic Level Power moSFET(5.8A, 30V, 0.037 Ω,双N沟道,逻辑电平功率moS场效应管) 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, n-channel, Si, POWER, moSFET
TRANSISTOR | moSFET | matched PAIR | n-channel | 30V V(BR)DSS | 5.8A I(D) | SO 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, n-channel, Si, POWER, moSFET
5.8A/ 30V/ 0.037 Ohm/ dual n-channel/ Logic Level Power moSFET
5.8A, 30V, 0.037 Ohm, dual n-channel, Logic Level Power moSFET
From old datasheet system

File Size 83.90K  /  5 Page

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For 10mv dual n-channel matched mo Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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