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15.645 Datasheet PDF File

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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	1PS302
OCR Text	... c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC...645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Te...
Description	High-speed double diode
File Size	52.66K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030B2VR
OCR Text	...1) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should ...645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.13K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVFR
OCR Text	...1) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should ...645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Ga...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVR
OCR Text	...1) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should ...645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	67.66K / 4 Page	View it Online	Download Datasheet

				Microsemi Corporation ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8030LVFR APT8030LVFRG
OCR Text	...1) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should ...645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Ga...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	62.47K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030LVR
OCR Text	...1) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should ...645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.26K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8030 APT8030B2VFR
OCR Text	...1) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should ...645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Ga...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 27A 0.300 Ohm
File Size	60.47K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BAT140 BAT140A BAT140C BAT140S
OCR Text	...V; f = 1 MHz; see Fig.7 280 460 15 60 65 330 500 40 300 80 mV mV A A pF PARAMETER CONDITIONS TYP. MAX. UNIT 1997 Oct 03 3 Philips S...645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Te...
Description	Schottky barrier double diodes
File Size	71.02K / 8 Page	View it Online	Download Datasheet

				Philipss PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BC307B BC307
OCR Text	...25 222 - - 600 - 100 - MAX. -15 -4 -15 455 455 -600 -1.1 720 3 - 10 UNIT nA A nA mV V mV pF MHz dB handbook, full pagewidth 4...645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Te...
Description	PNP general purpose transistors
File Size	48.49K / 8 Page	View it Online	Download Datasheet

				http:// PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BC847AF BC847BF BC847CF BC847F BC848BF BC846BF BC848CF BC848AF BC848F BC846AF BC846F
OCR Text	...VCE = 5 V - - - MIN. MAX. 15 5 100 220 450 800 200 400 700 770 1.5 - 10 UNIT nA A nA 110 200 420 IC = 10 mA; IB = 0.5 mA IC = 10...645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Te...
Description	High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer 24-PDIP -55 to 125 High Speed CMOS Logic 8-Bit Parallel-In/Serial-Out Shift Register 16-PDIP -55 to 125 High Speed CMOS Logic Quad D-Type Flip-Flop with Reset 16-SOIC -55 to 125 NPN general purpose transistors 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
File Size	51.67K / 8 Page	View it Online	Download Datasheet

For 15.645 Found Datasheets File :: 7090 Search Time::2.438ms
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