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Advanced Micro Devices, Inc.<br>
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| Part No. |
AM0000'>29F400bT-90FC AM0000'>29F400bT-90EIb AM0000'>29F400bT-90SE
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| Description |
4 0000'>megabit (0000'>510000'>2 K x 8-bit/0000'>20000'>56 K x 16-bit) 0000'>cmos 0000'>5.0 volt-only boot Sector Flash Memory 0000'>20000'>56K X 16 FLASH 0000'>5V PROM, 90 ns, PDSO48<br>4 0000'>megabit (0000'>510000'>2 K x 8-bit/0000'>20000'>56 K x 16-bit) 0000'>cmos 0000'>5.0 volt-only boot Sector Flash Memory 4兆位10000'>2亩x 8-bit/0000'>20000'>56亩x 16位).0伏的0000'>cmos只引导扇区闪<br>4 0000'>megabit (0000'>510000'>2 K x 8-bit/0000'>20000'>56 K x 16-bit) 0000'>cmos 0000'>5.0 volt-only boot Sector Flash Memory 0000'>20000'>56K X 16 FLASH 0000'>5V PROM, 90 ns, PDSO44<br>
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| File Size |
234.70K /
37 Page |
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it Online |
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Advanced Micro Devices, Inc.<br>
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| Part No. |
AM0000'>29DL30000'>20Gb90EIN AM0000'>29DL30000'>20Gb90WDIN AM0000'>29DL30000'>20Gb90WMI AM0000'>29DL30000'>20Gb10000'>20WDIN
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| Description |
30000'>2 0000'>megabit (4 M x 8-bit/0000'>2 M x 16-bit) 0000'>cmos 3.0 volt-only, Simultaneous Operation Flash Memory 0000'>2M X 16 FLASH 3V PROM, 90 ns, PDSO48<br>30000'>2 0000'>megabit (4 M x 8-bit/0000'>2 M x 16-bit) 0000'>cmos 3.0 volt-only, Simultaneous Operation Flash Memory 0000'>2M X 16 FLASH 3V PROM, 90 ns, PbGA63<br>30000'>2 0000'>megabit (4 M x 8-bit/0000'>2 M x 16-bit) 0000'>cmos 3.0 volt-only, Simultaneous Operation Flash Memory 0000'>2M X 16 FLASH 3V PROM, 90 ns, PbGA48<br>30000'>2 0000'>megabit (4 M x 8-bit/0000'>2 M x 16-bit) 0000'>cmos 3.0 volt-only, Simultaneous Operation Flash Memory 0000'>2M X 16 FLASH 3V PROM, 10000'>20 ns, PbGA63<br>
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| File Size |
815.84K /
55 Page |
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it Online |
Download Datasheet
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http://<br>AMD[Advanced Micro Devices]<br>Advanced Micro Devices, Inc.<br>Electronic Theatre Controls, Inc.<br>
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| Part No. |
AM0000'>29LV400b AM0000'>29LV400bb10000'>20EC AM0000'>29LV400bb10000'>20ECb AM0000'>29LV400bT10000'>20EC AM0000'>29LV400bT10000'>20ECb AM0000'>29LV400bT10000'>20EE AM0000'>29LV400bT10000'>20EEb AM0000'>29LV400bT10000'>20EI AM0000'>29LV400bT10000'>20EIb AM0000'>29LV400bT10000'>20FC AM0000'>29LV400bT10000'>20FCb AM0000'>29LV400bT10000'>20FE AM0000'>29LV400bT10000'>20FEb AM0000'>29LV400bT10000'>20FI AM0000'>29LV400bT10000'>20FIb AM0000'>29LV400bT10000'>20SC AM0000'>29LV400bT10000'>20SCb AM0000'>29LV400bT10000'>20SE AM0000'>29LV400bT10000'>20SEb AM0000'>29LV400bT10000'>20SI AM0000'>29LV400bT10000'>20SIb AM0000'>29LV400bT10000'>20WAC AM0000'>29LV400bT10000'>20WACb AM0000'>29LV400bT10000'>20WAE AM0000'>29LV400bT10000'>20WAEb AM0000'>29LV400bT10000'>20WAI AM0000'>29LV400bT10000'>20WAIb AM0000'>29LV400bT90FC AM0000'>29LV400bT90FCb AM0000'>29LV400bT90FE AM0000'>29LV400bT90FEb AM0000'>29LV400bT90FI AM0000'>29LV400bT90FIb AM0000'>29LV400bT70REC AM0000'>29LV400bT70RECb AM0000'>29LV400bT70REE AM0000'>29LV400bT70REEb AM0000'>29LV400bT70REI AM0000'>29LV400bT70REIb AM0000'>29LV400bT70RFC AM0000'>29LV400bT70RFCb AM0000'>29LV400bT70RFE AM0000'>29LV400bT70RFEb AM0000'>29LV400bT70RFI AM0000'>29LV400bT70RFIb AM0000'>29LV400bT70RSC AM0000'>29LV400bT70RSCb AM0000'>29LV400bT70RSE AM0000'>29LV400bT70RSEb AM0000'>29LV400bT70RSI AM0000'>29LV400bT70RSIb AM0000'>29LV400bT70RWAC AM0000'>29LV400bT70RWACb AM0000'>29LV400bT70RWAE AM0000'>29LV400bT70RWAEb AM0000'>29LV400bT70RWAI AM0000'>29LV400bT70RWAIb AM0000'>29LV400bT90SEb AM0000'>29LV400bT80SEb AM0000'>29LV400bT90WAIb AM0000'>29LV400bb10000'>20EE AM0000'>29LV400bb10000'>20EEb AM0000'>29LV400bb10000'>20EI AM0000'>29LV400bb10000'>20EIb AM0000'>29LV400bb10000'>20FC AM0000'>29LV400bb10000'>20FCb AM0000'>29LV400bb10000'>20FE AM0000'>29LV400bb10000'>20FEb AM0000'>29LV400bb
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| Description |
4 0000'>megabit (0000'>510000'>2 K x 8-bit/0000'>20000'>56 K x 16-bit) 0000'>cmos 3.0 volt-only boot Sector Flash Memory<br>FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :0000'>50%; Tolerance, -:0000'>20%; Temp, op. max:10000'>20000'>5(degree C); Temp, op.<br>Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 0000'>50, -0000'>20 %; Working Voltage, DC:0000'>50V; Dielectric Characteristic:X7R; Package/Case:10000'>206; Series:W3F; Leaded Process Compatible:Yes<br>Am0000'>29LV400b KGD (Known Good Die Supplement)<br>INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位10000'>2亩x 8-bit/0000'>20000'>56亩x 16位).0伏的0000'>cmos只引导扇区闪<br>4 0000'>megabit (0000'>510000'>2 K x 8-bit/0000'>20000'>56 K x 16-bit) 0000'>cmos 3.0 volt-only boot Sector Flash Memory 4兆位10000'>2亩x 8-bit/0000'>20000'>56亩x 16位).0伏的0000'>cmos只引导扇区闪<br>4 0000'>megabit (0000'>510000'>2 K x 8-bit/0000'>20000'>56 K x 16-bit) 0000'>cmos 3.0 volt-only boot Sector Flash Memory 0000'>20000'>56K X 16 FLASH 3V PROM, 10000'>20 ns, PbGA48<br>4 0000'>megabit (0000'>510000'>2 K x 8-bit/0000'>20000'>56 K x 16-bit) 0000'>cmos 3.0 volt-only boot Sector Flash Memory 0000'>20000'>56K X 16 FLASH 3V PROM, 10000'>20 ns, PDSO48<br>4 0000'>megabit (0000'>510000'>2 K x 8-bit/0000'>20000'>56 K x 16-bit) 0000'>cmos 3.0 volt-only boot Sector Flash Memory 4兆位10000'>2x 8-bit/0000'>20000'>56x 16位).0伏的0000'>cmos只引导扇区闪<br>CAP CERM 0000'>2.0000'>2UF 4V X7R 0610000'>2 0000'>20% 4兆位10000'>2亩x 8-bit/0000'>20000'>56亩x 16位).0伏的0000'>cmos只引导扇区闪<br>4 0000'>megabit (0000'>510000'>2 K x 8-bit/0000'>20000'>56 K x 16-bit) 0000'>cmos 3.0 volt-only boot Sector Flash Memory 0000'>510000'>2K X 8 FLASH 3V PROM, 70 ns, PDSO48<br>
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| File Size |
46.64K /
7 Page |
View
it Online |
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