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  4.3nh Datasheet PDF File

For 4.3nh Found Datasheets File :: 577    Search Time::2.968ms    
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    ADPOW[Advanced Power Technology]
Part No. DRF100
OCR Text ...2,3 Fall Time 2,3 Prop. Delay 2,4 Symmetry 1 Min CL Max Unit ns % 3.1 2.8 33 1.2 7.5 7.5 38 Driver Output Characteristi...3nH. A typical MOSFET can exceed this value. C 2-2006 050-4912 Rev A Figure 18 T1 A T2 ...
Description High Speed MOSFET Driver

File Size 2,364.38K  /  12 Page

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    M470L3224DT0 M470L3224DT0-CA0 M470L3224DT0-CA2 M470L3224DT0-CB0 M470L3224DT0-CB3 M470L3224DT0-LA0 M470L3224DT0-LA2 M470L

Samsung semiconductor
Part No. M470L3224DT0 M470L3224DT0-CA0 M470L3224DT0-CA2 M470L3224DT0-CB0 M470L3224DT0-CB3 M470L3224DT0-LA0 M470L3224DT0-LA2 M470L3224DT0-LB0 M470L3224DT0-LB3
OCR Text ...* Programmable Burst length (2, 4, 8) * Programmable Burst type (sequential & interleave) * Edge aligned data output, center aligned data in...3nH. 2.VTT is not applied directly to the device. VTT is a system supply for signal termination resi...
Description 256MB DDR SDRAM MODULE

File Size 148.88K  /  12 Page

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    HDD128M72D18RPW-16B HDD128M72D18RPW HDD128M72D18RPW-13A HDD128M72D18RPW-13B

Hanbit Electronics Co.,Ltd
Part No. HDD128M72D18RPW-16B HDD128M72D18RPW HDD128M72D18RPW-13A HDD128M72D18RPW-13B
OCR Text ...s) : 2, 2.5 - Burst length : 2, 4, 8 - Data scramble : Sequential & Interleave * Data(DQ), Data strobes and write masks latched on the risin...3nH. 2.VTT is not applied directly to the device. VTT is a system supply for signal termination resi...
Description DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register

File Size 444.12K  /  14 Page

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    HDD16M72D9RPW HDD16M72D9RPW-13A HDD16M72D9RPW-13B HDD16M72D9RPW-10A

HANBIT[Hanbit Electronics Co.,Ltd]
Part No. HDD16M72D9RPW HDD16M72D9RPW-13A HDD16M72D9RPW-13B HDD16M72D9RPW-10A
OCR Text ...* Programmable Burst length (2, 4, 8) * Programmable Burst type (sequential & interleave) * Edge aligned data output, center aligned data in...3nH. 2. VTT is not applied directly to the device. V TT is a system supply for signal termination re...
Description DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with PLL & Register [HANBIT]

File Size 334.88K  /  10 Page

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    HDD32M64F8 HDD32M64F8-13A HDD32M64F8-13B HDD32M64F8-10A

HANBIT[Hanbit Electronics Co.,Ltd]
Part No. HDD32M64F8 HDD32M64F8-13A HDD32M64F8-13B HDD32M64F8-10A
OCR Text ...* Programmable Burst length (2, 4, 8) * Programmable Burst type (sequential & interleave) * Edge aligned data output, center aligned data in...3nH. 2. VTT is not applied directly to the device. V TT is a system supply for signal termination re...
Description DDR SDRAM Module 256Mbyte (32Mx64bit), based on 32Mx8, 4Banks, 8K Ref., SMM,

File Size 194.00K  /  11 Page

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    HDD32M72B9 HDD32M72B9-13A HDD32M72B9-13B HDD32M72B9-16B

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HANBIT[Hanbit Electronics Co.,Ltd]
Part No. HDD32M72B9 HDD32M72B9-13A HDD32M72B9-13B HDD32M72B9-16B
OCR Text ...s) : 2, 2.5 - Burst length : 2, 4, 8 - Burst type : Sequential & Interleave * Data(DQ), Data strobes and write masks latched on the rising a...3nH. A 2. VTT is not applied directly to the device. V TT is a system supply for signal termination ...
Description DDR SDRAM Module 256Mbyte (32Mx72bit), based on32Mx8,4Banks, 8K Ref., ECC Unbuffered SO-DIMM

File Size 195.67K  /  12 Page

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    Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M470L1714BT0-CLB0 M470L1714BT0-CLA0 M470L1714BT0-CLA2 M470L1714BT0 M470L1714BT0-CA0 M470L1714BT0-CA2 M470L1714BT0-CB0
OCR Text ...* Programmable Burst length (2, 4, 8) * Programmable Burst type (sequential & interleave) * Edge aligned data output, center aligned data in...3nH. 2.VTT is not applied directly to the device. VTT is a system supply for signal termination resi...
Description 16Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet
128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)

File Size 125.14K  /  14 Page

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    WV3EG128M72EFSR262D3MG WV3EG128M72EFSR-D3 WV3EG128M72EFSR335D3MF WV3EG128M72EFSR335D3MG WV3EG128M72EFSR265D3MF WV3EG128M

WEDC[White Electronic Designs Corporation]
Part No. WV3EG128M72EFSR262D3MG WV3EG128M72EFSR-D3 WV3EG128M72EFSR335D3MF WV3EG128M72EFSR335D3MG WV3EG128M72EFSR265D3MF WV3EG128M72EFSR265D3MG WV3EG128M72EFSR262D3MF WV3EG128M72EFSR335D3SG WV3EG128M72EFSR262D3SF WV3EG128M72EFSR262D3SG WV3EG128M72EFSR265D3SF WV3EG128M72EFSR265D3SG WV3EG128M72EFSR335D3SF
OCR Text ...k) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input A...3nH. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination res...
Description 1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA

File Size 243.61K  /  13 Page

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    WEDC[White Electronic Designs Corporation]
Part No. WV3EG232M64EFSU265D4MG WV3EG232M64EFSU335D4SG WV3EG232M64EFSU262D4MG WV3EG232M64EFSU262D4SG WV3EG232M64EFSU265D4SG WV3EG232M64EFSU335D4MG WV3EG232M64EFSU-D4
OCR Text ...) Programmable Burst Length (2, 4 or 8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data inpu...3nH. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination res...
Description 512MB - 2x32Mx64 DDR SDRAM, UNBUFFERED, w/PLL, FBGA

File Size 160.01K  /  11 Page

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    WEDC[White Electronic Designs Corporation]
Part No. WV3EG264M72ESFR-D4 WV3EG264M72ESFR335D4-SG WV3EG264M72ESFR262D4-MG WV3EG264M72ESFR262D4-SG WV3EG264M72ESFR265D4-MG WV3EG264M72ESFR265D4-SG WV3EG264M72ESFR335D4-MG
OCR Text ... Programmable burst: length (2, 4, 8) Programmable READ# latency (CL): 2 and 2.5 (clock) Serial Presence Detect (SPD) with EEPROM Auto and s...3nH. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination res...
Description 1GB - 2x64Mx72 DDR SDRAM REGISTERED, w/PLL

File Size 160.64K  /  11 Page

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For 4.3nh Found Datasheets File :: 577    Search Time::2.968ms    
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