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  400v 20a Datasheet PDF File

For 400v 20a Found Datasheets File :: 1460    Search Time::1.125ms    
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    HIROSE ELECTRIC Co., Ltd.
Part No. 6EP1434-2BA00 6EP1436-2BA00 6EP1437-2BA00 6EP1437-2BA10
OCR Text ...echselstromnetz nennspannungen 400v bis 500v, 50/60hz. ausgangsspannung +24v dc, potentialfrei, kurzschluss- und leerlauffest. technische d...20a 0-30a 0-40a parallelschalten von zwei gleichartigen ger?ten zur leistungserh?hung ist zul?ssig. ...
Description PSU 24V 40A DIN RAIL
PSU 24V 10A DIN RAIL 电源24V0A条导
10-Port Constant-Current LED Drivers and I/O Expanders with PWM Intensity Control 电源24V0A条导

File Size 161.21K  /  8 Page

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    STW20NM50FD

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STW20NM50FD
OCR Text ...esistance VGS = 0V, VDS = 0V to 400v f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID ...20a, VGS = 10V Min. Typ. 22 20 38 18 10 53 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff...
Description N-CHANNEL Power MOSFET
N-CHANNEL 500V - 0.22ohm - 20a TO-247 FDmesh Power MOSFET with FAST DIODE
N-CHANNEL 500V 0.22 OHM 20a TO-247 FDMESH POWER MOSFET
N-CHANNEL 500V - 0.22ohm - 20a TO-247 FDmesh⑩ Power MOSFET with FAST DIODE
N-CHANNEL 500V 0.22 OHM 20a TO-247 FDMESH POWER MOSFET

File Size 247.27K  /  8 Page

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    FGB20N60SFD

Fairchild Semiconductor
Part No. FGB20N60SFD
OCR Text ...(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 13 - ns t r rise time - 16 - ns t d(off) turn-off delay time - 90 - ns t f fall time - 24 48 ns e on turn-on switching loss - 0.3...
Description 600V, 20a Field Stop IGBT

File Size 336.82K  /  9 Page

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    FGB20N60SF

Fairchild Semiconductor
Part No. FGB20N60SF
OCR Text ...(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 13 - ns t r rise time - 16 - ns t d(off) turn-off delay time - 90 - ns t f fall time - 24 48 ns e on turn-on switching loss - 0.3...
Description 600V, 20a Field Stop IGBT

File Size 308.54K  /  8 Page

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    Infineon
Part No. SGB15N60HS
OCR Text ...d time 1) v ge = 15v, v cc 400v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 138 w operating junction and storage t...20a t c , case temperature t c , case temperature figure 3. power dissipation as a function of cas...
Description IGBTs & DuoPacks - 15A 600V TO263 IGBT

File Size 384.79K  /  11 Page

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    STTA2006P STTA2006PI

STMicroelectronics
Part No. STTA2006P STTA2006PI
OCR Text ... =-50A/s VR =30V Tj = 125C VR = 400v dIF/dt = -160 A/s dIF/dt = -500 A/s Tj = 125C VR = 400v dIF/dt = -500 A/s IF =20a 12.5 17.5 IF =20a 0.42 / Min Typ 30 60 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol t fr Parameter Forwar...
Description TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

File Size 65.13K  /  8 Page

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    Infineon
Part No. SKB15N60HS
OCR Text ...d time 1) v ge = 15v, v cc 400v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 138 w operating junction and storage t...20a t c , case temperature t c , case temperature figure 3. power dissipation as a function of cas...
Description IGBTs & DuoPacks - 15A 600V TO263 IGBT Diode

File Size 414.45K  /  14 Page

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    BYV34300M BYV34-500M BYV34-300M BYV34-400M BYV34-300SMD BYV34-500SMD BYV34-400SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. BYV34300M BYV34-500M BYV34-300M BYV34-400M BYV34-300SMD BYV34-500SMD BYV34-400SMD
OCR Text ...M 300V 300V 300V BYV34 -400M 400v 300V 300V 200A 20a BYV34 -500M 500V 400v 400v (switching operation, d = 0.5, both diodes conducting) IFSM Tstg Tj Surge Non Repetitive Forward Current Storage Temperature Range Maximum Operating Ju...
Description 400v, 2x10A Dual Fast Recovery common cathode Rectifier diode
300V, 2x10A Dual Fast Recovery common cathode Rectifier diode
HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS
5.0 AMP POSITIVE VOLTAGE REGULATOR
500V, 2x10A Dual Fast Recovery common cathode Rectifier diode

File Size 22.63K  /  2 Page

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    SGB15N60HS06

Infineon Technologies AG
Part No. SGB15N60HS06
OCR Text ...me 2) v ge = 15v, v cc 400v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 138 w operating junction and...20a t c , case temperature t c , case temperature figure 3. power dissipation as a functi...
Description High Speed IGBT in NPT-technology

File Size 814.23K  /  11 Page

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    SKB15N60HS07

Infineon Technologies AG
Part No. SKB15N60HS07
OCR Text ...me 2) v ge = 15v, v cc 400v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 138 w operating junction and...20a t c , case temperature t c , case temperature figure 3. power dissipation as a functi...
Description High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

File Size 1,180.85K  /  14 Page

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For 400v 20a Found Datasheets File :: 1460    Search Time::1.125ms    
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