44.2-ohm pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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44.2-ohm Datasheet PDF File

For 44.2-ohm Found Datasheets File :: 7030 Search Time::1.453ms
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				MACOM[Tyco Electronics]
Part No.	MA4SPS302
OCR Text	...18-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. V 2.0 1 Surface Mount Monolithic PIN ...
Description	Surface Mount Monolithic PIN Diode Chip 表面贴装芯片单片PIN二极
File Size	55.50K / 3 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MACPES0028
OCR Text	...+85 2 2111 8087 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com Specifications subject to change without notice. Operating Characteristics Function Input Output Coupled Ground Not Connected External 75 Ohms ...
Description	E-Series 75 Ohm Coupler 40 - 1000 MHZ
File Size	57.13K / 2 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GU1111 MRF175GV
OCR Text	...nction to Case Symbol RJC Max 0.44 Unit C/W Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Re...2.5 1.0 Vdc mAdc Adc 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise n...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	205.41K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF175GU MRF175GV
OCR Text	... THERMAL CHARACTERISTICS Max 0.44 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ M...2.5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage fro...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	183.29K / 8 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF175GV MRF175GU
OCR Text	... THERMAL CHARACTERISTICS Max 0.44 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ M...2.5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage fro...
Description	From old datasheet system N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	210.44K / 11 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF176 MRF176GU MRF176GV
OCR Text	...nction to Case Symbol RJC Max 0.44 Unit C/W Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Re...2.5 1.0 Vdc mAdc Adc (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1995 MRF176GU MRF176GV 1 ...
Description	N-CHANNEL MOS BROADBAND RF POWER FETs
File Size	176.10K / 10 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text	... MHz 26 28 30 32 34 36 38 40 42 44 46 48 T = 25_C 55_C 85_C Pout, OUTPUT POWER (dBm) Figure 5. Power Gain versus Output Power Fi...2.92 - j8.24 3.84 - j9.75 4.15 - j10.38 4.04 - j10.22 6.12 - j12.29 6.20 - j12.29 8.61 - j12.10 15.1...
Description	SEE A3282EUA-T CHOPPER STABILIZED LATCH W/TIN PLATING SEE A3282ELHLT-T RF Power Field Effect Transistors
File Size	504.66K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	...59 1.31 + j4.00 ZOL* 2.27 + j3.44 2.05 + j3.05 1.90 + j2.90 1.64 + j2.88 1.29 + j2.99 = Complex conjugate of the source impedance. ZOL* = Complex conjugate of the optimum load at a given voltage, P1dB, gain, efficiency, bias current ...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	...9 1.31 - j4.00 Zload 2.27 - j3.44 2.05 - j3.05 1.90 - j2.90 1.64 - j2.88 1.29 - j2.99 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching N...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text	...OWER (WATTS) 100 34 36 40 38 42 44 46 Pout, OUTPUT POWER (dBm) AVG. 48 50 EVM 14 13 12 11 10 9 8 G ps , POWER GAIN (dB) , DRAIN EFFICIEN...2.00 -30 -35 2.05 G ps, POWER GAIN (dB) 16 15 14 Gps 13 12 11 10 1 h VDD = 26 Vdc IDQ = 800 mA f ...
Description	RF Power Field Effect Transistors
File Size	607.07K / 12 Page	View it Online	Download Datasheet

For 44.2-ohm Found Datasheets File :: 7030 Search Time::1.453ms
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