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White Electronic Designs Corporation
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Part No. |
EDI2AG272129V9D1 EDI2AG272129V10D1 EDI2AG272129V12D1 EDI2AG272129V85D1
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Description |
2x128Kx72, 3.3V,9ns, sync/sync Burst SRAM Module(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块) 2x128Kx72, 3.3V,10ns, sync/sync Burst SRAM Module(2x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 2x128Kx72, 3.3V,12ns, sync/sync Burst SRAM Module(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块) 2x128Kx72,, 3.3V,8.5ns, sync/sync Burst SRAM Module(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块)
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File Size |
259.95K /
11 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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Part No. |
NDT2955 NDT2955J23Z
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Description |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 2.5AI(四)|的SOT - 223 P-Channel Enhancement mode Field Effect Transistor2.5A60V.3ΩP沟道增强型场效应管(漏电2.5A, 漏源电压-60V,导通电.3Ω
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File Size |
90.86K /
6 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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Part No. |
RLP03N06CLE RLD03N06CLE RLD03N06CLESM
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Description |
0.3A/ 60V/ 6 Ohm/ ESD Rated/ current Limited/ Voltage Clamped/ Logic Level N-Channel Power MOSFETs 0.3A, 60V, 6 Ohm, ESD Rated, current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 额定,电流限制,电压箝位,逻辑电平N沟道功率MOS场效应管)
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File Size |
92.90K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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