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INTERSIL[Intersil Corporation] Intersil, Corp. Fairchild Semiconductor, Corp.
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Part No. |
HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S12N60A4S9A
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OCR Text |
...125oC MIN 600 10 60 TYP 2.0 1.6 5.6 8 78 97 17 8 96 18 55 160 50 MAX 250 2.0 2.7 2.0 250 96 120 UNITS V V A mA V V V nA A V nC nC ns ns ns ns J J J
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector t... |
Description |
600V, SMPS Series N-Channel IGBT From old datasheet system 600V/ SMPS Series N-Channel IGBT 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB 600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
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File Size |
114.49K /
10 Page |
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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Part No. |
MRF19030 MRF19030R3 MRF19030SR3
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OCR Text |
...kHz BW 1.25 MHz -- -55 dBc @ 12.5 kHz BW 2.25 MHz -- -55 dBc @ 1 MHz BW Output Power -- 4.5 Watts Avg. Power Gain -- 13.5 dB Efficiency -- 1...G ps , POWER GAIN (dB) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IM... |
Description |
RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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File Size |
386.08K /
8 Page |
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
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Part No. |
MRF19060 MRF19060R3 MRF19060SR3
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OCR Text |
... 8 Through 13 Output Power -- 7.5 Watts Power Gain -- 12.5 dB Adjacent Channel Power -- 885 kHz: -47 dBc @ 30 kHz BW 1.25 MHz: -55 dBc @ 12....G ps , POWER GAIN (dB) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IM... |
Description |
RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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File Size |
382.95K /
8 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司 Motorola, Inc. Advanced Semiconductor MOTOROLA[Motorola, Inc]
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Part No. |
MRF9060 MRF9060R1 MRF9060S MRF9060SR1
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OCR Text |
... Symbol VDSS VGS PD Value 65 -0.5, +15 159 0.91 219 1.25 -65 to +200 200 Unit Vdc Vdc Watts W/C Watts W/C C C
ESD PROTECTION CHARACTERIST...G ps , POWER GAIN (dB) 16 15 14 13 12 11 10 930 IRL IMD Gps h VDD = 26 Vdc Pout = 60 W (PEP) IDQ = 4... |
Description |
4 MEGABIT 3.3 VOLT SERIAL CONFIGURATION UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
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File Size |
388.20K /
12 Page |
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it Online |
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Price and Availability
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