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  5.6mm Datasheet PDF File

For 5.6mm Found Datasheets File :: 17542    Search Time::1.281ms    
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    IRF9140

International Rectifier
Part No. IRF9140
OCR Text ...epetitive avalanche energy 12.5 mj dv/dt peak diode recovery dv/dt a -5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6mm) from case for 10s) weight 11.5(typical) g pd - 93976...
Description -100V,Thru-Hole Radiation Hardened Power MOSFET(-100V,???瀹?????灏????娌??MOSFET)

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    IRF[International Rectifier]
Part No. IRHYS597034CM IRHYS593034CM
OCR Text ...IRHYS597034CM 60V, P-CHANNEL 5 TECHNOLOGY Low-Ohmic TO-257AA International Rectifier's R5TM technology provides high performan...6mm from case for 10s) 4.3 ( Typical ) g www.irf.com 1 01/07/05 IRHYS597034CM Pre-Ir...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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    IRF[International Rectifier]
Part No. IRHYS597Z30CM IRHYS593Z30CM
OCR Text ...IRHYS597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY Low-Ohmic TO-257AA International Rectifier's R5TM technology provides high performan...6mm from case for 10s) 4.3 ( Typical ) g www.irf.com 1 12/21/04 IRHYS597Z30CM Pre-Ir...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ...25 50 50 50 16 9 7 300 200 50 3.5 MAX -4 -25 -250 100 0.600 50 100 100 100 22 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH...6mm (0.25in) From Header to Source Bonding Pad G LS S 7.5 - nH Thermal Resistance Jun...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRL5Y024CM
OCR Text ...age 17 11 68 35 0.28 16 49 11 3.5 4.0 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 10/27/00 IRL5Y024CM Electrical Characteristics @ Tj = 25C (...
Description HEXFET POWER MOSFET THRU-HOLE (TO-257AA) HEXFET功率MOSFET的通孔(对257AA
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package

File Size 103.33K  /  7 Page

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    IRF[International Rectifier]
Part No. IRL7Y1905C
OCR Text ...ange Lead Temperature Weight 10 5.0 20 15 0.12 16 20 10 7.5 2.2 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) Units A W W/C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1...
Description 50V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
HEXFET POWER MOSFET THRU-HOLE (TO-257AA) 50V, N-CHANNEL

File Size 111.21K  /  7 Page

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    IRF[International Rectifier]
Part No. IRL7YS1404CM
OCR Text ...- -- -- -- -- -- -- -- -- -- -- 5.74 -- -- V V/C Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 20A V...6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge VGS = 0V, VDS = 25V f = 1.0MHz ...
Description 55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
HEXFET POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA) 40V, N-CHANNEL

File Size 126.64K  /  7 Page

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    IRF[International Rectifier]
Part No. JANS2N7236 IRFM9140 JANTX2N7236 JANTXV2N7236 IRFM9140D IRFM9140UPBF
OCR Text ...8 -11 -72 125 1.0 20 500 -18 12.5 -5.5 -55 to 150 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 09/22/03 IRFM9140 Electrical Characteristics @ Tj = 25C (Un...
Description Simple Drive Requirements
18 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
From old datasheet system
POWER MOSFET THRU-HOLE (TO-254AA)
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package

File Size 211.77K  /  7 Page

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    IRF[International Rectifier]
Part No. JANSF2N7389 IRHF9130 IRHF93130 JANSR2N7389
OCR Text ...notes refer to the last page -6.5 -4.1 -26 25 0.2 20 165 -6.5 2.5 -22 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 ( 0.063 in. (1.6mm) from case for 10s) 0.98 (typical) g www.irf.com 1 2/18/03 ...
Description -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

File Size 125.31K  /  8 Page

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    IRF[International Rectifier]
Part No. JANSH2N7262 IRHF7230 IRHF8230 JANSR2N7262
OCR Text ... 200V 200V RDS(on) 0.35 0.35 ID 5.5A 5.5A Features: n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event...6mm) from case for 10s) 0.98 (typical) www.irf.com 1 10/13/98 IRHF7230, IRHF8230,JANSR-,JA...
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

File Size 298.46K  /  12 Page

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For 5.6mm Found Datasheets File :: 17542    Search Time::1.281ms    
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