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  512bytes Datasheet PDF File

For 512bytes Found Datasheets File :: 96    Search Time::1.25ms    
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    K9F1208B0C

Samsung semiconductor
Part No. K9F1208B0C
OCR Text ... = 528 Mbits 8 bits 16 Bytes 512bytes Page Register 512 Bytes I/O 0 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle A0 A9 A17 A25 I/O 1 A1 A10 A18 *L I/O 2 A2 A11 A19 *L 16 Bytes I/O 3 A3 A12 A20 *L I/O 0 ~ I/O 7 I/O 4 A4 A13 A21 *L ...
Description FLASH MEMORY

File Size 716.17K  /  38 Page

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    HY27UF084G2M

Hynix Semiconductor
Part No. HY27UF084G2M
OCR Text ... 1) Add ECC algorithm. (1bit/512bytes) 2) Change NOP 3) Correct Read ID naming 1) Delet Preliminary. 1) Correct copy back function. 1) Delete PRE function. 2) Delete Lock & Unlock function. 3) Delete Auto Read function. Jun. 20. 2006 ...
Description 4Gbit (512Mx8bit) NAND Flash

File Size 347.31K  /  49 Page

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    TS60GSSD25D-M TS120GSSD25D-M

Transcend Information. Inc.
Part No. TS60GSSD25D-M TS120GSSD25D-M
OCR Text ...The Attribute Values consist of 512bytes. Device Attribute Data Structure Individual Attribute Data Structure 9 Transcend Information Inc. Preliminary V1.02 TS60GSSD25D--M TS60GSSD25D M TS120GSSD25D-M TS120GSSD25D-M Attribut...
Description 2.5隆卤 Solid State Drive
2.5 Solid State Drive

File Size 1,182.90K  /  18 Page

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    HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM-MPEB

Hynix Semiconductor, Inc.
Part No. HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM-MPEB
OCR Text ...ary Add ECC algorithm. (1bit/512bytes) Change NOP Correct Read ID naming Change DC characterics ICC1 Typ 30 30 Max 60 45 ICC2 Typ 30 30 Max 60 45 ICC3 Typ 30 30 Max 60 45 Jun. 20. 2006 Preliminary HY27UH08AG(5/D)M Series 16Gbit (2Gx8b...
Description 16Gbit (2Gx8bit) NAND Flash
2G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 1 MM HEIGHT, LEAD FREE, TLGA-52

File Size 352.98K  /  49 Page

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    HY27UG088G5M HY27UG088GDM HY27UG088GDM-UPEB HY27UG088G5M-TEB HY27UG088G5M-TPMB HY27UG088GDM-UPMB HY27UG088G5M-TPIB HY27U

Hynix Semiconductor, Inc.
Part No. HY27UG088G5M HY27UG088GDM HY27UG088GDM-UPEB HY27UG088G5M-TEB HY27UG088G5M-TPMB HY27UG088GDM-UPMB HY27UG088G5M-TPIB HY27UG088G5M-TPCB HY27UG088GDM-UPCB HY27UG088G5M-TCB HY27UG088G5M-TPEB HY27UG088G5M-TIP HY27UG088G5M-TIB HY27UG088G5M-TIS HY27UG088GDM-UPIB
OCR Text ...ing 2) Add ECC algorithm. (1bit/512bytes) 3) Change valid block number (max) valid block number Before After 0.3 8092 8192 Jun. 20. 2006 ICC2 Typ 25 15 Max 45 30 ICC3 Typ 25 15 Max 45 30 Preliminary - Continued History Draft Date ...
Description 8Gbit (1Gx8bit) NAND Flash
1G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
1G X 8 FLASH 3.3V PROM, 25 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48
1G X 8 FLASH 3.3V PROM, 25 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, TSOP1-48

File Size 349.43K  /  50 Page

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    K9F1208B0C K9F1208X0C K9F1208R0CJIB00

Samsung semiconductor
Part No. K9F1208B0C K9F1208X0C K9F1208R0CJIB00
OCR Text ...r0c k9f1208u0c k9f1208b0c 512bytes 16 bytes figure 1. k9f1208x0c functional block diagram figure 2. k9f1208x0c array organization v cc x-buffers 512m + 16m bits command nand flash array (512 + 16)bytes x 131,072 y-gating page registe...
Description 64M x 8 Bits NAND Flash Memory

File Size 821.39K  /  38 Page

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    HY27US081G1M HY27US161G1M

Hynix Semiconductor
Part No. HY27US081G1M HY27US161G1M
OCR Text ... 1) Add ECC algorithm. (1bit/512bytes) 0.04 2) Correct Read ID Cycle & Read ID naming 3) Correct Copy back program 4) Change DC and Operating Characteristics 1) Correct Read ID Cycle 0.1 0.2 2) Change NOP 3) Correct copy back function 1)...
Description 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

File Size 320.76K  /  39 Page

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    MAX21000

Maxim Integrated Products
Part No. MAX21000
OCR Text ...ble embedded fifo ? size: 512bytes (256 x 16 bits) ? single-byte reading available ? four different fifo modes available ? reduces ap load high configurability ? integrated digitally programmable low- a...
Description Ultra-Accurate, Low Power, 3-Axis Digital Output Gyroscope

File Size 942.72K  /  26 Page

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    Samsung Electronic
Part No. K5P6480YCM-T085
OCR Text ... cs 1 s vccs cs2 s lb byte s sa 512bytes 16 bytes note : column address : starting address of the register. 00h command(read) : defines the starting address of the 1st half of the register. 01h command(read) : defines the starting address ...
Description 64M Bit (8Mx8) Nand Flash Memory / Data Sheet

File Size 549.73K  /  29 Page

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    Samsung Electronic
Part No. K5Q6432YCM-T010
OCR Text ...ock diagram ub cs u vccu zz lb 512bytes 16 bytes note : column address : starting address of the register. 00h command(read) : defines the starting address of the 1st half of the register. 01h command(read) : defines the starting address ...
Description 64M Bit Voltage Full CMOS Static RAM Data Sheet

File Size 617.62K  /  32 Page

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