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Hynix Semiconductor, Inc.
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Part No. |
HY27UG088G5M HY27UG088GDM HY27UG088GDM-UPEB HY27UG088G5M-TEB HY27UG088G5M-TPMB HY27UG088GDM-UPMB HY27UG088G5M-TPIB HY27UG088G5M-TPCB HY27UG088GDM-UPCB HY27UG088G5M-TCB HY27UG088G5M-TPEB HY27UG088G5M-TIP HY27UG088G5M-TIB HY27UG088G5M-TIS HY27UG088GDM-UPIB
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OCR Text |
...ing 2) Add ECC algorithm. (1bit/512bytes) 3) Change valid block number (max) valid block number Before After 0.3 8092 8192 Jun. 20. 2006 ICC2 Typ 25 15 Max 45 30 ICC3 Typ 25 15 Max 45 30 Preliminary
- Continued
History
Draft Date
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Description |
8Gbit (1Gx8bit) NAND Flash 1G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52 1G X 8 FLASH 3.3V PROM, 25 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48 1G X 8 FLASH 3.3V PROM, 25 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, TSOP1-48
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File Size |
349.43K /
50 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
K5P6480YCM-T085
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OCR Text |
... cs 1 s vccs cs2 s lb byte s sa 512bytes 16 bytes note : column address : starting address of the register. 00h command(read) : defines the starting address of the 1st half of the register. 01h command(read) : defines the starting address ... |
Description |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
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File Size |
549.73K /
29 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
K5Q6432YCM-T010
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OCR Text |
...ock diagram ub cs u vccu zz lb 512bytes 16 bytes note : column address : starting address of the register. 00h command(read) : defines the starting address of the 1st half of the register. 01h command(read) : defines the starting address ... |
Description |
64M Bit Voltage Full CMOS Static RAM Data Sheet
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File Size |
617.62K /
32 Page |
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it Online |
Download Datasheet |
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Price and Availability
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