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Microsemi
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| Part No. |
APTC80H29T3G
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| OCR Text |
...sistance v gs = 10v, i d = 7.5a 290 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 1ma 2.1 3 3.9 v i gss gate ...250 500 750 1000 1250 0 1 02 03 04 05 0 gate resistance (ohms) switching energy (j) switching energy... |
| Description |
Full Bridge
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| File Size |
424.47K /
7 Page |
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Microsemi
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| Part No. |
APTC80H29SCTG
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| OCR Text |
...sistance v gs = 10v, i d = 7.5a 290 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 1ma 2.1 3 3.9 v i gss gat...250 a i f dc forward current tc = 85c 30 a v f diode forward voltage i f = 30a ... |
| Description |
Full Bridge Series And Parallel Diodes
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| File Size |
793.50K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SFWI9630
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| OCR Text |
...=1MHz See Fig 5 VDD=-100V,ID=-6.5a, RG=12 See Fig 13
45 OO
VDS=-160V,VGS=-10V, ID=-6.5a See Fig 6 & Fig 12
45 OO
Source-Drain Diode ...250 s, Duty Cycle _ 2% < O 5 O Essentially Independent of Operating Temperature
o AS DD G J o SD DD... |
| Description |
Advanced Power MOSFET
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| File Size |
251.77K /
7 Page |
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Microsemi
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| Part No. |
APT80GA90LD40
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| OCR Text |
...st <0.5 % duty cycle i c = 23.5a i c = 47a i c = 94a i c = 47a i c = 94a 13v 5v 15v i c = 47a t j = 25c v ce = 720v v ce = 450v v ...250 300 0 20 40 60 80 100 10 12 14 16 18 20 22 24 0... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
217.16K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SFU9130 SFR9130
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| OCR Text |
...=1MHz See Fig 5 VDD=-50V,ID=-10.5a, RG=12 See Fig 13 VDS=-80V,VGS=-10V, ID=-10.5a See Fig 6 & Fig 12
45 OO 45 OO
Source-Drain Diode Rat...250 s, Duty Cycle < 2% _ O 5 O Essentially Independent of Operating Temperature
P-CHANNEL POWER M... |
| Description |
Advanced Power MOSFET
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| File Size |
257.24K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP1N50B
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| OCR Text |
...dge.
Features
* * * * * * 1.5a, 520V, RDS(on) = 5.3 @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switch...250 A ID = 250 A, Referenced to 25C VDS = 520 V, VGS = 0 V VDS = 400 V, TC = 125C VGS = 30 V, VDS = ... |
| Description |
520V N-Channel MOSFET
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| File Size |
626.90K /
8 Page |
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SIPEX[Sipex Corporation]
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| Part No. |
SPX2941_06 SPX2941 SPX2941T5 SPX2941T5_TR SPX2941U5
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| OCR Text |
...Quiescent Current Guaranteed 1.5a Peak Output Current Low Dropout Voltage of 280mV @ 1A Extremely Tight Load and Line Regulation Extreme...250
3.320 3.310 3.300 3.290
IGnd ( A)
VOUT (V)
240 230 220 210 200 190 180 -40 -20 0 20 ... |
| Description |
1A Low Dropout Voltage Regulator Adjustable Output, Fast Response
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| File Size |
841.84K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP4N80AS
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| OCR Text |
...iode in the MOSFET TJ=25 C,IS=4.5a,V GS=0V TJ=25 C,IF=4.5a diF/dt=100A/s
4 O
Notes ; 1 O Repetitive Rating : Pulse Width Limited by M...250 s, Duty Cycle <2% 5 O Essentially Independent of Operating Temperature
www.DataSheet4U.com... |
| Description |
ADVANCED POWER MOFET
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| File Size |
279.41K /
7 Page |
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it Online |
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Price and Availability
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