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OPNEXT[Opnext. Inc.]
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| Part No. |
HL6724MG
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| OCR Text |
...endicular TC = 25C PO = 5 mW
674 672 670 668 664 662 660 -10 0 10 20 30 40 50
Case temperature, TC (C)
Rev.0 Oct. 17, 2006 page 2 o...03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
Japan (Japanese) Other... |
| Description |
AlGaInP Laser Diode
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| File Size |
88.86K /
4 Page |
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OPNEXT[Opnext. Inc.]
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| Part No. |
HL6740FG
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| OCR Text |
...ngth, p (nm)
682 680 678 676 674 672 670 668 666 664 0
PO = 5 mW
Far Field Pattern Perpendicular
Relative intensity
PO = 5 mW
...03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
Japan (Japanese) Other... |
| Description |
Dual Beam Visible Laser Diode
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| File Size |
90.69K /
4 Page |
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INTEGRAL[Integral Corp.]
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| Part No. |
IZ74LV240 IN74LV240 IN74LV240DW IN74LV240N
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| OCR Text |
...215 0.76 0.9285 1.2115 1.4615 1.674 1.674 1.685 1.674 1.6795 1.674 1.0525 0.7545 0.586 0.293 0.112 0.112 0.112 Y 0.55 0.246 0.131 0.131 0.13...03
Note: Pad location is given as per metallization layer
INTEGRAL
5
... |
| Description |
OCTAL BUFFER/LINE DRIVE; 3-STATE
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| File Size |
43.91K /
5 Page |
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INTEGRAL JOINT STOCK COMPANY INTEGRAL[Integral Corp.]
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| Part No. |
IZ74LV241 IN74LV241 IN74LV241DW IN74LV241N
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| OCR Text |
...215 0.76 0.9285 1.2115 1.4615 1.674 1.674 1.685 1.674 1.6795 1.674 1.0525 0.7545 0.586 0.293 0.112 0.112 0.112 Y 0.55 0.246 0.131 0.131 0.13...03
Note: Pad location is given as per metallization layer
INTEGRAL
5
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| Description |
Octal Registered Transceivers With 3-State Outputs 24-SO -40 to 85 OCTAL BUFFER/LINE DRIVE; 3-STATE
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| File Size |
43.05K /
5 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21100HSR3 MRF5S21100HR3
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| OCR Text |
...Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.674 x 0.080 Microstrip 0.421 x 0.080 Microstrip 0.140 x 0.080 Microstrip 1.031 x 0.080 Microstrip 0.380 x 0....03
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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| File Size |
388.49K /
12 Page |
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Freescale (Motorola) MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| OCR Text |
...Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.674 0.421 0.140 1.031 0.380 0.080 0.927 0.620 0.079
x 0.080 x 0.080 x 0.080 x 0.080 x 0.643 x 0.643 x 0.0...03
Figure 2. MRF5S21100L Test Circuit Component Layout
MRF5S21100LR3 MRF5S21100LSR3 MOTOROLA R... |
| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
561.39K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRFG35010N
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| OCR Text |
...51.22 |S21| 4.710 4.303 3.963 3.674 3.427 3.211 3.023 2.853 2.705 2.570 2.447 2.337 2.234 2.139 2.052 1.971 1.894 1.823 1.754 1.691 1.626 1....03 - 19.03 - 20.17 - 21.26 - 22.45 - 23.68 - 24.90 - 26.12 - 27.41 - 28.72 - 30.05 |S12| 0.021 0.022... |
| Description |
RF Power Field Effect Transistor
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| File Size |
181.50K /
12 Page |
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NEC[NEC]
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| Part No. |
NE32584C_98 NE32584C NE32584C-S NE32584C-T1 NE32584C98
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| OCR Text |
...0.925 0.879 0.821 0.757 0.708 0.674 0.628 0.605 0.549 0.513 0.504 0.504 0.517 0.527 0.530 0.543 ANG -1.81 -3.77 -9.43 -18.65 -36.35 -53.13 -...03 176.09 170.33 161.14 143.49 126.61 110.09 94.24 79.85 66.26 53.02 39.77 25.65 11.83 -2.24 -15.42 ... |
| Description |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
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| File Size |
50.69K /
6 Page |
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California Eastern Laboratories, Inc. CEL[California Eastern Labs]
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| Part No. |
NE67483B NE67400
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| OCR Text |
...Dissipation, PT (mW)
300
NE 674
Drain Current, IDS (mA)
40 -0.2 V 30
NE
00
200
67 48 3B
20
-0.4 V
100
10
...03 1.08 1.12 1.09 1.15 1.15 1.14 1.12 1.11 1.07 1.08 1.04 1.08 1.03 K MAG1 (dB) 00.00 00.00 34.72 29... |
| Description |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
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| File Size |
103.82K /
7 Page |
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it Online |
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