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7ns Datasheet PDF File

For 7ns Found Datasheets File :: 3514 Search Time::3.64ms
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				Integrated Device Technology
Part No.	71V416S15PHG IDT71V416L IDT71V416S
OCR Text	...ut in high-z ____ 5 ____ 6 ____ 7ns t oe output enable low to output valid ____ 5 ____ 6 ____ 7ns t ol z (1) output enable low to output in low-z 0 ____ 0 ____ 0 ____ ns t ohz (1 ) output enable high to output in high-z ____ 5 ____ 6 ____ 7...
Description	3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Single 3.3V power supply
File Size	102.14K / 9 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	M30624FGPGPU5C M30626MWP M30625MWP M30627MWP M30622M6P- M30622MWP M3062JFHTGP M30622M8P- M30623M8P-
OCR Text	... instruction execution time 41.7ns(f(bclk)=24mhz, vcc1=3.3 to 5.5v) 100ns(f(bclk)=10mhz, vcc1=2.7 to 5.5v) operating mode single-chip, memory expansion and microprocessor mode address space 1 mbyte (available to 4 mbytes by memory space ex...
Description	SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
File Size	1,115.98K / 103 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	KFG1216D2M-DEB KFG1216D2M-DED KFG1216D2M-DIB KFG1216D2M-DID KFG1216Q2M-DEB KFG1216Q2M-DED KFG1216Q2M-DIB KFG1216Q2M-DID KFG1216U2M-DEB KFG1216U2M-DED KFG1216U2M-DIB KFG1216U2M-DID KFG1G16D2M-DEB KFG1G16D2M-DED KFG1G16Q2M-DEB KFG1G16D2M-DID KFG1G16Q2M-DID KFG1G16D2M-DIB KFG1G16Q2M-DIB KFG1G16U2M-DID KFH1G16D2M-DIB KFH1216D2M-DIB KFH1216Q2M-DEB KFH1G16Q2M-DEB KFG1G16U2M-DEB KFG1G16U2M-DED KFH1216D2M-DED KFH1216D2M-DID KFH1216D2M-DEB KFH1216Q2M-DED KFH1216Q2M-DID KFH1216U2M-DED KFH1216U2M-DEB KFH1216U2M-DIB KFH1G16D2M-DEB KFH1216U2M-DID KFG1G16U2M-DIB KFH1G16D2M-DED
OCR Text	...eters are changed. tACH : 9ns-->7ns, tCES : 7ns-->9ns, tAAVDS : 5ns-->7ns tDS : 30ns-->10ns, tDH : 0ns-->4ns 5. Define new AC parameter. tAWES(Address hold time in AVD low case of asynchronous write mode) Min. 0ns 1. Correct an errata Ball ...
Description	FLASH MEMORY
File Size	1,213.80K / 93 Page	View it Online	Download Datasheet

				AMIC Technology
Part No.	A43L8316V-10 A43L8316V-8
OCR Text	...upt (I) Change tSHZ in Hi-Z at 7ns part: 7.5ns 7ns (max.) Change tSHZ in Hi-Z at 8ns part: 7ns 7.5ns (max.) Add 7ns and 8ns parts Preliminary (April, 2000, Version 1.0) AMIC Technology, Inc. A43L8316 Preliminary Features n n...
Description	128K X 16 Bit X 2 Banks Synchronous DRAM
File Size	1,382.54K / 45 Page	View it Online	Download Datasheet

				Renesas Technology
Part No.	M16C/62
OCR Text	...nce M16C/62P 91 instructions 41.7ns(f(BCLK)=24MHz, VCC1=3.0 to 5.5V) 100ns(f(BCLK)=10MHz, VCC1=2.7 to 5.5V) Single-chip, memory expansion and microprocessor mode 1 Mbyte (Available to 4M bytes by memory space expansion function) See table 1...
Description	SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
File Size	864.87K / 87 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KM416S1020C
OCR Text	...16s1020c-7 @ cl2 from 12ns to 8.7ns, accordingly, the ac and dc parameters of km416s1020c-7 @ cl2 are changed in ac/dc characteristics . for this part, the vdd condition of ac operat- ing test is 3.135v ~ 3.6v. ? changed icc1 of km416s10...
Description	1M x 16 SDRAM
File Size	779.03K / 43 Page	View it Online	Download Datasheet

				Galvantech
Part No.	GVT7132D32 7132D32S
OCR Text	... Fast access times: 5.5, 6, and 7ns Fast clock speed: 100, 75, and 66MHz Provide high performance 3-1-1-1 access rate Fast OE# access times: 5.5, 6, and 7ns Optimal for depth expansion (one cycle chip deselect to eliminate bus contention) S...
Description	32K X 32 SYNCHRONOUS BURST SRAM From old datasheet system
File Size	93.61K / 14 Page	View it Online	Download Datasheet

				Hynix Semiconductor Inc.
Part No.	HY5DU283222F-36 HY5DU283222F-28 HY5DU283222F-26
OCR Text	...lowings a) tAC : changed from 0.7ns to 0.9ns at 3.3/4/4.5ns b) tDQSCK : changed from 0.6ns to 0.7ns at 3.3/4/4.5ns c) tRCD/tRP : changed from 5clk to 6clk at 3.3ns and 4clk to 5clk at 4/4.5ns 1) 222Mhz speed bin removed 2) IDD Specification...
Description	128M(4Mx32) GDDR SDRAM
File Size	353.38K / 30 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D263238A K4D263238A-GC33 K4D263238A-GC36 K4D263238A-GC40 K4D263238A-GC45 K4D263238A-GC50
OCR Text	...CK(max) of K4D263238A-GC40 from 7ns to 10ns. * Changed tCK(max) of K4D263238A-GC33/36 from 5ns to 4ns. For all the CL5 operation, guaranteed tCK(max) is 4ns. Revision 1.5 (December 14, 2001) * Removed K4D26323RA-GC2A/33/36(VDD/VDDQ=2.8V...
Description	DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL
File Size	295.84K / 17 Page	View it Online	Download Datasheet

For 7ns Found Datasheets File :: 3514 Search Time::3.64ms
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