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ADPOW[Advanced Power Technology]
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| Part No. |
APTM100UM65S-ALN
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| OCR Text |
...S = 0V,VDS= 1000V VGS = 0V,VDS= 800v
Tj = 25C Tj = 125C
Min
Typ
VGS = 10V, ID = 72.5A VGS = VDS, ID = 20ma VGS = 30 V, VDS = 0V
65 3
Max 400 2 78 5 400
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg... |
| Description |
Single switch Series & parallel diodes MOSFET Power Module
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| File Size |
308.36K /
6 Page |
 View
it Online |
Download Datasheet
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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
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| Part No. |
BUL52B BUL52
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| OCR Text |
... 341927. Fax (01455) 552612.
800v 400V 10V 8A 12A 4A 100W -55 to +150C
Prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unle...20ma IB = 0.2A IB = 0.4A IB = 0.6A IB = 0.2A IB = 0.4A IB = 0.6A VCE = 4V f = 1MHz IC = 1A IC = 2A I... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.27K /
2 Page |
View
it Online |
Download Datasheet |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL54BFI
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| OCR Text |
... 341927. Fax (01455) 552612.
800v 400V 10V 5A 8A 3A 30W -55 to +150C
Prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless...20ma IB = 0.2A IB = 0.4A IB = 0.2A IB = 0.4A VCE = 4V f = 1MHz VCE = 400V
V 10 100 100 10 100
... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
18.18K /
2 Page |
View
it Online |
Download Datasheet |
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|
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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
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| Part No. |
BUL54B
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| OCR Text |
... 341927. Fax (01455) 552612.
800v 400V 10V 5A 8A 3A 70W -55 to +150C
Prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless...20ma IB = 0.2A IB = 0.4A IB = 0.2A IB = 0.4A VCE = 4V f = 1MHz VCE = 400V
V 10 100 100 10 100
... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
18.15K /
2 Page |
View
it Online |
Download Datasheet |
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|
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL62B
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| OCR Text |
... 341927. Fax (01455) 552612.
800v 400V 10V 8A 12A 4A 25W -55 to +150C
Prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unles...20ma IB = 0.4A IB = 0.6A IB = 0.4A IB = 0.6A VCE = 4V f = 1MHz VCE = 400V
V 10 100 100 10 100
... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.21K /
2 Page |
View
it Online |
Download Datasheet |
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|
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SEME-LAB[Seme LAB]
SemeLAB
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| Part No. |
BUL64B
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| OCR Text |
... 341927. Fax (01455) 552612.
800v 400V 10V 5A 8A 2A 20W -55 to +150C
Prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless...20ma IB = 0.2A IB = 0.4A IB = 0.2A IB = 0.4A VCE = 4V f = 1MHz VCE = 400V
V 10 100 100 10 100
... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
18.90K /
2 Page |
View
it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100UM65DAG
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| OCR Text |
...S = 0V,VDS= 1000V VGS = 0V,VDS= 800v
Tj = 25C Tj = 125C
Typ
VGS = 10V, ID = 72.5A VGS = VDS, ID = 20ma VGS = 30 V, VDS = 0V
65 3
Max 400 2 78 5 400
Unit A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qg... |
| Description |
Single switch with Series diode MOSFET Power Module
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| File Size |
273.06K /
6 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM100UM65D-ALN
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| OCR Text |
...S = 0V,VDS= 1000V VGS = 0V,VDS= 800v
Tj = 25C Tj = 125C
Min 1000
Typ
Max 400 2 65 5 400
VGS = 10V, ID = 75A VGS = VDS, ID = 20ma VGS = 30 V, VDS = 0V
3
Unit V A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss ... |
| Description |
Single switch with Series diode MOSFET Power Module
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| File Size |
317.82K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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