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  800v s Datasheet PDF File

For 800v s Found Datasheets File :: 4530    Search Time::2.203ms    
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    CM100DY-28H

POWEREX[Powerex Power Semiconductors]
Part No. CM100DY-28H
OCR Text ... = 125C Total Gate Charge VCC = 800v, IC = 100A, VGE = 15V * Pulse width and repetition rate should be such that device junction temperatur...s IE = 100A, VGE = 0V IE = 100A, diE/dt = -300A/s VCC = 800v, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1...
Description Dual IGBTMOD 100 Amperes/1400 Volts

File Size 67.61K  /  4 Page

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    CM150DY-28H

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM150DY-28H
OCR Text ... = 125C Total Gate Charge VCC = 800v, IC = 150A, VGE = 15V * Pulse width and repetition rate should be such that device junction temperatur...s IE = 150A, VGE = 0V IE = 150A, diE/dt = -300A/s VCC = 800v, IC = 150A, VGE1 = VGE2 = 15V, RG = 2.1...
Description Dual IGBTMOD 150 Amperes/1400 Volts

File Size 69.57K  /  4 Page

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    CM200DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM200DY-28H
OCR Text ...Emitter-Collector Voltage VCC = 800v, IC = 200A, VGE = 15V IE = 200A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 1020 - Max. 1.0 0....s IE = 200A, diE/dt = -400A/s VCC = 800v, IC = 200A, VGE1 = VGE2 = 15V, RG = 1.6 VGE = 0V, VCE = 10V...
Description IGBT Modules:1400V
HIGH POWER sWITCHING UsE INsULATED TYPE

File Size 49.59K  /  4 Page

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    CM300DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM300DY-28H
OCR Text ...Emitter-Collector Voltage VCC = 800v, IC = 300A, VGE = 15V IE = 300A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 1530 - Max. 1.0 0....s IE = 300A, diE/dt = -600A/s VCC = 800v, IC = 300A, VGE1 = VGE2 = 15V, RG = 1.0 VGE = 0V, VCE = 10V...
Description IGBT Modules:1400V
HIGH POWER sWITCHING UsE INsULATED TYPE

File Size 49.35K  /  4 Page

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    CM50DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM50DY-28H
OCR Text ...Emitter-Collector Voltage VCC = 800v, IC = 50A, VGE = 15V IE = 50A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 255 - Max. 1.0 0.5 8...s IE = 50A, diE/dt = -100A/s VCC = 800v, IC = 50A, VGE1 = VGE2 = 15V, RG = 6.3 VGE = 0V, VCE = 10V T...
Description IGBT Modules:1400V
MEDIUM POWER sWITCHING UsE INsULATED TYPE

File Size 48.00K  /  4 Page

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    CM75DY-28H

Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM75DY-28H
OCR Text ...Emitter-Collector Voltage VCC = 800v, IC = 75A, VGE = 15V IE = 75A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 383 - Max. 1.0 0.5 8...s IE = 75A, diE/dt = -150A/s VCC = 800v, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2 VGE = 0V, VCE = 10V T...
Description HIGH POWER sWITCHING UsE INsULATED TYPE
IGBT Modules:1400V

File Size 47.54K  /  4 Page

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    KA1M0380RB KA1M0380RB-TU KA1M0380RB-YDTU KA1L0380 KA1L0380B KA1L0380B-TU KA1L0380B-YDTU KA1L0380RB KA1L0380RB-TU KA1L038

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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
Part No. KA1M0380RB KA1M0380RB-TU KA1M0380RB-YDTU KA1L0380 KA1L0380B KA1L0380B-TU KA1L0380B-YDTU KA1L0380RB KA1L0380RB-TU KA1L0380RB-YDTU KA1H0380 KA1H0380RB KA1H0380RB-TU KA1H0380RB-YDTU
OCR Text ...L TO-220F-4L(Forming) Rating 800v, 3A 800v, 3A 800v, 3A 800v, 3A Fosc 50kHz 50kHz 67kHz 100kHz 10 KA1L0380B/KA1L0380RB/KA1M0380R...s PRODUCTs ARE NOT AUTHORIZED FOR UsE As CRITICAL COMPONENTs IN LIFE sUPPORT DEVICEs OR sYsTEMs WITH...
Description REs NET BUssED 560K OHM 10-sIP
Fairchild Power switch(sPs) 12 A sWITCHING REGULATOR, 100 kHz sWITCHING FREQ-MAX, PZFM4
Fairchild Power switch(sPs) 2.41 A sWITCHING REGULATOR, 100 kHz sWITCHING FREQ-MAX, PsFM4
Fairchild Power switch(sPs) 12 A sWITCHING REGULATOR, 50 kHz sWITCHING FREQ-MAX, PsFM4
Fairchild Power switch(sPs) 2.41 A sWITCHING REGULATOR, 50 kHz sWITCHING FREQ-MAX, PsFM4

File Size 74.47K  /  12 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT7M120s APT7M120B
OCR Text ...F 5 VGs = 0V, VDs = 0V to 800v Effective Output Capacitance, Energy Related Total Gate Charge Gate-source Charge Gate-Drain Charge ...s 28 1.0 1165 18 10 V ns C V/ns IsD = 3A, TJ = 25C, VGs = 0V IsD = 3A, VDD = 100V 3 disD/dt = ...
Description N-Channel MOsFET

File Size 249.66K  /  4 Page

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    Advanced Power Technology, Ltd.
Part No. APTC80AM75sC
OCR Text ...anche energy 670 mj v dss = 800v r dson = 75m max @ tj = 25c i d = 56a @ tc = 25c application motor control switched mode ...s t j = 125c 48 ns t j = 25c 66 q rr reverse recovery charge i f = 60a v r = 1...
Description Phase leg series & siC parallel diodes super Junction MOsFET Power Module 相脚系列

File Size 303.79K  /  7 Page

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    STW10NK80Z

STMICROELECTRONICS
Part No. sTW10NK80Z
OCR Text 800v - 0.78 ? - 9a - to-220/fp-to-247 zener-protected supermesh tm mosfet general features extremely high dv/dt capability 100% avalanch...s well established strip-based powermesh? layout. in addition to pushing on-resistance significant...
Description 9 A, 800 V, 0.9 ohm, N-CHANNEL, si, POWER, MOsFET, TO-247

File Size 425.90K  /  15 Page

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For 800v s Found Datasheets File :: 4530    Search Time::2.203ms    
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