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百利通电子（上海）有限公
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| Part No. |
PI6C39911-2JE PI6C39911-2JEX
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| OCR Text |
...ction to gnd, and mid indicates an open connection. internal termination circuitry holds an unconnected input to v cc /2. 2. the level to be...31.0 cc i hi tnerrucegakaelhgihtupni )ylnostupnibfdnafer( v cc v,.xam= ni .xam =0 2 a i li tnerruce... |
| Description |
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| File Size |
417.15K /
11 Page |
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it Online |
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http://
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
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| Part No. |
RF2152PCBA-N RF2152PCBA-J RF2152
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| OCR Text |
.... The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use ...31.5 45 28.5 35 -46 -58
28 -32 31 40 28
N E ro W d
uc ts
30 -44 -56
< 2:1 6.0 86.5 89... |
| Description |
CAP .33F 5.5V GOLD SD VERTICAL
DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3V POWER AMPLIFIER RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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| File Size |
250.04K /
12 Page |
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it Online |
Download Datasheet |
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AMCC
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| Part No. |
S5933QE
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| OCR Text |
...ster burst write operation with an asynchronous fifo interface description: when performing a bus master write to the pci bus, if only one ...31:0] valid. this is missing from table and should be 16 ns maximum for qe silicon. the same figure ... |
| Description |
PCI Interface Device Summary
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| File Size |
126.04K /
5 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT58L128L32D1
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| OCR Text |
...gns that are fabri- cated using an advanced cmos process. microns 4mb syncburst srams integrate a 256k x 18, 128k x 32, or 128k x 36 sram co...31 mode 32 sa 33 sa 34 sa 35 sa 36 sa1 37 sa0 38 dnu 39 dnu 40 v ss 41 v dd 42 nf** 43 nf** 44 sa 45... |
| Description |
128K x 32锛?.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb锛?.3V杈??/杈??锛??姘寸嚎寮????惊???娑???╋??????????瀛???ī
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| File Size |
418.97K /
24 Page |
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it Online |
Download Datasheet |
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Price and Availability
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