Description |
3 Megabit (256 K x 8-bit) cmos 12.0 Volt Bulk Erase Flash Memory(509.20 k) Rectangular Connector; Body Material:polyester; Series:8016; Number of Contacts:38; Contact Material:phosphor Bronze; Contact plating:Gold Over Nickel; Gender:Male; Leaded process Compatible:Yes; peak Reflow Compatible (260 C):Yes Rectangular Connector; Body Material:polyester; Series:8016; Number of Contacts:38; Contact Material:phosphor Bronze; Contact plating:Gold Over Nickel; Gender:Female; Leaded process Compatible:Yes; peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-bit) cmos 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的cmos 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-bit) cmos 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V pROM, 90 ns, pDSO32 2 Megabit (256 K x 8-bit) cmos 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V pROM, 90 ns, pDIp32 2 Megabit (256 K x 8-bit) cmos 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位)的cmos 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-bit) cmos 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V pROM, 200 ns, pQCC32 2 Megabit (256 K x 8-bit) cmos 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V pROM, 150 ns, pDIp32 2 Megabit (256 K x 8-bit) cmos 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V pROM, 120 ns, pDSO32 2 Megabit (256 K x 8-bit) cmos 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V pROM, 120 ns, pDIp32 2 Megabit (256 K x 8-bit) cmos 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V pROM, 200 ns, pDSO32 2 Megabit (256 K x 8-bit) cmos 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V pROM, 150 ns, pQCC32
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