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die-46 Datasheet PDF File

For die-46 Found Datasheets File :: 7651 Search Time::1.563ms
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				NXP Semiconductors Philips Semiconductors ETC
Part No.	BGY925 BGY925_4
OCR Text	...e NPN silicon planar transistor die and two silicon MOSFET dies mounted on a metallized ceramic AlN substrate, together with matching and bi...46 c 0.3 0.2 D 30.1 29.9 E 18.6 18.4 e e1 F 3.25 3.15 L 6.5 6.1 p 4.1 3.9 Q 4.0 3.8 q U U1 15.4 15.2...
Description	From old datasheet system UHF amplifier module
File Size	88.27K / 12 Page	View it Online	Download Datasheet

				CLARE[Clare, Inc.] Clare Inc
Part No.	CPC1230 CPC1230N CPC1230NTR
OCR Text	...OSFET switches and photovoltaic die use Clare's patented OptoMOS(R) architecture. The optically coupled input is controlled by a highly effi...46-862-10370 Fax: 46-862-10371 United Kingdom Clare UK Sales Marco Polo House Cook Way Bindon Road T...
Description	4 Pin SOP OptoMOS Relay 4引脚SOP OptoMOS继电
File Size	177.14K / 6 Page	View it Online	Download Datasheet

				http:// HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	INA-02100
OCR Text	...mbly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire.[1] Chip Outline[1] RF OUT G...46 0.50 0.51 -4 -8 -46 -52 -46 -44 -35 -29 -41 -60 -73 -89 -103 -116 -128 -146 -162 32.5 32.5 ...
Description	Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Low Noise Cascadable Silicon Bipolar MMIC Amplifier
File Size	49.46K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2153
OCR Text	... & Design Rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 231 68 X 101 X 26 (mil) Thickness of Gate Oxide Connections First Laye...46 0.19 0.25 4.80 4.98 3.81 3.99 1.27 BASIC 0.635 BASIC 5.80 6.20 0.28 0.48 0.41 1.27 0 8 SO-8 ...
Description	SELF-OSCILLATING HALF-BRIDGE DRIVER
File Size	209.66K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7201 IRF7201PBF IRF7201TR
OCR Text	...al characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices...46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0.10 (.0...
Description	Generation V Technology 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	111.54K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7204 IRF7204TR
OCR Text	...hermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices...46 0.25 4.98 3.99 DIM 5 MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .1...
Description	TRI N PLUG M 0-48 NO SEAL Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A) -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	141.26K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7205 IRF7205PBF IRF7205TR
OCR Text	...hermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices...46 0.25 4.98 3.99 DIM 5 MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .1...
Description	-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	162.31K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7301 IRF7301TR
OCR Text	...al characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices...46 0.25 4.98 3.99 DIM 5 MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .1...
Description	FERRITE BEAD BLM21A601S Power MOSFET(Vdss=20V Rds(on)=0.050ohm) Power MOSFET(Vdss=20V, Rds(on)=0.050ohm) 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	109.86K / 9 Page	View it Online	Download Datasheet

				International Rectifier http://
Part No.	IRF7303 IRF7303TR
OCR Text	...al characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices...46 0.25 4.98 3.99 DIM 5 MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .1...
Description	Generation V Technology 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
File Size	107.34K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7306 IRF7306TR IRF7306TRPBF
OCR Text	...al characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices...46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 ...
Description	Generation V Technology -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	109.78K / 9 Page	View it Online	Download Datasheet

For die-46 Found Datasheets File :: 7651 Search Time::1.563ms
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