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  high voltage insulated gate bi Datasheet PDF File

For high voltage insulated gate bi Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    CAT24FC256 CAT24FC256JA CAT24FC256JE CAT24FC256JI CAT24FC256KA CAT24FC256KE CAT24FC256KI CAT24FC256LA CAT24FC256LE CAT24

ITT, Corp.
NXP Semiconductors N.V.
CATALYST[Catalyst Semiconductor]
Part No. CAT24FC256 CAT24FC256JA CAT24FC256JE CAT24FC256JI CAT24FC256KA CAT24FC256KE CAT24FC256KI CAT24FC256LA CAT24FC256LE CAT24FC256LI CAT24FC256PA CAT24FC256PE CAT24FC256PI CAT24FC256WA CAT24FC256WE CAT24FC256WI CAT24FC256XA CAT24FC256XE CAT24FC256XI
Description 256K-bit I2C Serial CMOS EEPROM 256K位I2C串行CMOS EEPROM
LM5100/LM5101 high voltage high Side and Low Side gate Driver; Package: LLP; No of Pins: 10 256K位I2C串行CMOS EEPROM
LM5100A/B/C LM5101A/B/C 3A, 2A and 1A high voltage high-Side and Low-Side gate Drivers; Package: LLP; No of Pins: 10
LM5100A/B/C LM5101A/B/C 3A, 2A and 1A high voltage high-Side and Low-Side gate Drivers; Package: SOIC NARROW; No of Pins: 8
Serial EEPROM, Full Array Write Protect, 256Kb, 400kHz

File Size 409.78K  /  12 Page

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    LTC4440ES6-5 LTC4440-5 LTC4440EMS8E-5 LTC4440EMS8E-5TR

LINEAR TECHNOLOGY CORP
Linear Technology, Corp.
Part No. LTC4440ES6-5 LTC4440-5 LTC4440EMS8E-5 LTC4440EMS8E-5TR
Description high Speed, high voltage high Side gate Driver; Package: SOT; No of Pins: 6; Temperature Range: -40&deg;C to 125&deg;C
high Speed, high voltage, high Side gate Driver
high Speed, high voltage high Side gate Driver; Package: MSOP; No of Pins: 8; Temperature Range: -40&deg;C to 125&deg;C 1.1 A BUF OR INV BASED MOSFET DRIVER, PDSO8

File Size 246.05K  /  12 Page

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    TOSHIBA
Part No. GT40T101
Description insulated gate biPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE high POWER SWITCHING APPLICATIONS

File Size 226.29K  /  5 Page

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    CM600HN-5F

Mitsubishi Electric Corporation
MITSUbiSHI[Mitsubishi Electric Semiconductor]
Part No. CM600HN-5F
Description Integrated gate bipolar Transistor (IGBT) Modules: 250V
high POWER SWITCHING USE insulated TYPE

File Size 65.59K  /  4 Page

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    TOSHIBA
Part No. GT40M301
Description insulated gate biPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE high POWER SWITCHING APPLICATIONS

File Size 258.36K  /  6 Page

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    MITSUbiSHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM600HA-5F
Description high POWER SWITCHING USE insulated TYPE
Integrated gate bipolar Transistor (IGBT) Modules: 250V

File Size 45.01K  /  4 Page

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    TOSHIBA
Part No. GT80J101
Description insulated gate biPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE high POWER SWITCHING APPLICATIONS

File Size 234.45K  /  5 Page

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    TOSHIBA
Part No. GT60M301
Description insulated gate biPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE high POWER SWITCHING APPLICATIONS

File Size 296.06K  /  6 Page

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    IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15

International Rectifier
Part No. IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15
Description insulated gate biPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   insulated gate biPOLAR TRANSISTOR

File Size 647.10K  /  10 Page

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    MGP14N60E-D

ON Semiconductor
Part No. MGP14N60E-D
Description insulated gate bipolar Transistor N-Channel Enhancement-Mode Silicon gate

File Size 107.80K  /  6 Page

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For high voltage insulated gate bi Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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