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  mocvd Datasheet PDF File

For mocvd Found Datasheets File :: 117    Search Time::2.188ms    
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    SPA-1526Z SPA-1526Z-EVB1 SPA-1526Z-EVB2 SPA-1526Z-EVB3

RF Micro Devices
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Part No. SPA-1526Z SPA-1526Z-EVB1 SPA-1526Z-EVB2 SPA-1526Z-EVB3
OCR Text ... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastruct...
Description 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

File Size 373.92K  /  14 Page

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    SPA-1426Z SPA-1426Z-EVB1 SPA-1426Z-EVB2 SPA-1426Z-EVB3

RF Micro Devices
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Part No. SPA-1426Z SPA-1426Z-EVB1 SPA-1426Z-EVB2 SPA-1426Z-EVB3
OCR Text ... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastruct...
Description 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER

File Size 517.31K  /  14 Page

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    LuxNet Corporation
Part No. VG1A-1000
OCR Text ...produced using state of the art mocvd reactor. We achieved excellent uniformity and reproducibility. Run to run wavelength reproducibility is within +/5nm. Thickness uniformity within a 3" wafer with 5mm edge exclusion is <1%. Characterizat...
Description 850nm VCSEL Epiwafer

File Size 172.65K  /  2 Page

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    Microsemi
Part No. LX5506-LQ
OCR Text ...ar Transistor (HBT) IC process (mocvd). It operates at a single positive voltage supply of 3.3V (nominal), with +26dBm of P1dB and up to 23dB power gain in the 5.15 5.85GHz frequency range with a simple output matching capacitor pair. Fo...
Description Wireless LAN Power Amplifier

File Size 273.93K  /  8 Page

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    Microsemi
Part No. LX5510-LQ
OCR Text ...ar Transistor (HBT) IC process (mocvd). With single low voltage supply of 3.3V 20 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector...
Description Wireless LAN Power Amplifier

File Size 216.56K  /  7 Page

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    RFMD
Part No. SZP-5026Z
OCR Text ... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 4.9GHz to 5.9GHz bands. It is pr...
Description 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER

File Size 438.77K  /  14 Page

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    Roithner Lasertechnik
Part No. QL65D7SB
OCR Text mocvd grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5 mW for optoelectronic devices such as DVD-P/ROM. APPLICATION - DVD-P/ROM - Optical Leveler ...
Description InGaAlP Laser Diode

File Size 75.41K  /  3 Page

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    QSI
Part No. QL85H6S-A
OCR Text ... ? overview ql85h6sa is a mocvd grown 850nm band algaas laser diode with quantum well structure. it's an attractive light source, with a typical light output power of 20mw for industrial optical module and sensor applications. ? ...
Description Laser Diode

File Size 219.27K  /  7 Page

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    LX5501A LX5501ASE

Microsemi Corporation
Part No. LX5501A LX5501ASE
OCR Text ...olar transistor (hbt) process (mocvd). designed as an easily cascadable 50- ohm internally matched gain block, the lx5501a can be used for if and rf amplification in wireless / wired voice and data communication products as well as ...
Description InGAP HBT Gain Block

File Size 150.03K  /  7 Page

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    LX5512ELQ LX5512ELQ-TR

Microsemi Corporation
Part No. LX5512ELQ LX5512ELQ-TR
OCR Text ...r transistor (hbt) ic process (mocvd). it operates at a single low voltage supply of 3.3v with 34 db power gain between 2.4-2.5ghz, at a low quiescent current of 50 ma. for 19dbm ofdm output power (64qam, 54mbps), the pa provides a...
Description InGaP HBT 2.4 ?2.5 GHz Power Amplifier

File Size 572.95K  /  11 Page

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For mocvd Found Datasheets File :: 117    Search Time::2.188ms    
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