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    CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300BZXC CY7C1512KV18-300BZC CY7C1514KV18-300BZC CY7C1514KV18-250BZC CY7C1

Cypress Semiconductor, Corp.
Part No. CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300BZXC CY7C1512KV18-300BZC CY7C1514KV18-300BZC CY7C1514KV18-250BZC CY7C1514KV18-250BZI CY7C1514KV18-250BZXC CY7C1514KV18-333BZC CY7C1514KV18-333BZI CY7C1514KV18-333BZXC CY7C1514KV18-333BZXI CY7C1514KV18-250BZXI CY7C1525KV18 CY7C1512KV18-350BZC
OCR Text ...ument number: 001-00436 rev. *m page 2 of 33 logic block diagram (cy7c1510kv18) logic block diagram (cy7c1525kv18) 4m x 8 array clk a (21:0)...burst of two sequential transfers. c input clock positive input clock for output data. c is used in ...
Description 72-Mbit QDR II SRAM 2-Word burst Architecture Two-word burst on all accesses
72-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165

File Size 603.26K  /  33 Page

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    Cypress Semiconductor, Corp.
Part No. CY7C0430BV CY7C04312BV-100BGC
OCR Text ...bv document #: 38-06027 rev. *a page 2 of 37 functional description the cy7c043xxbv is a family of 10 gb/s, true four-ported datapath swi...burst counter on the input address register. after externally loading the counter with the initial a...
Description 10 Gb/s 3.3V QuadPort DSE Family 32K X 18 FOUR-PORT SRAM, 5 ns, PBGA272
QuadPort DSE 1Mb Memory

File Size 832.11K  /  37 Page

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    Spansion Inc.
Spansion, Inc.
Part No. S71WS512N S71WS512P
OCR Text ... asynchronous read mode yes yes page mode read yes yes page size 4-words 8-words synchronous (burst) read mode yes yes burst frequency 54 mhz / 66 mhz / 80 mhz 54 mhz / 66 mhz / 80 mhz / 108 mhz burst length 8 / 16 / 32 continuous 8 / 16 /...
Description Migrating from the S71WS512N to the S71WS512P 从S71WS512N迁移到S71WS512P

File Size 381.70K  /  18 Page

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI CY7C1373D-133AXI CY7C1371D-100BZC CY7C1371D-100BZI CY7C1373D-100AXC CY7C1373D-100AXI CY7C1371D-100AXC CY7C1373D-133AXC CY7C1371D-133AXI CY7C1373D-100BZC CY7C1371D-133BGC CY7C1371D-133BGI CY7C1371D-133AXC CY7C1373D-100BGC CY7C1373D-133BGC CY7C1373D-133BGXI CY7C1373D-133BZXC CY7C1373D-133BZXI CY7C1373D-133BZI CY7C1373D-133BGXC CY7C1373D-133BZC CY7C1371D-133BGXC CY7C1371D-100BGXI ICY7C1373D-100BGXI CY7C1373D-100BZXC CY7C1371D-100BZXC CY7C1371D-100BGC ICY7C1373D-100BGI
OCR Text ...3d document #: 38-05556 rev. *a page 2 of 30 1 2 c mode bw a bw b we ce1 ce2 ce3 oe read ? logic dqs dqp a dqp b dqp c dqp d memory array ...burst logic a0' a1' d1 d0 q1 q0 a0 a1 adv/ld ce adv/ld c c lk c en write drivers d a t a s t e e r i...
Description 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119

File Size 449.66K  /  30 Page

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    http://
Winbond Electronics, Corp.
Winbond Electronics Corp
Part No. W986408CH-8H W986408CH-75 W986408CH
OCR Text ...t length: 1, 2, 4, 8 , and full page burst read, single writes mode byte data controlled by dqm power-down mode auto-precharge and controlled precharge 4k refresh cycles / 64ms interface: lvttl package: tsop ii 54 pin, ...
Description 2M x 8BIT x 4 BANKS SDRAM
x8 SDRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54

File Size 2,212.49K  /  44 Page

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    Winbond Electronics, Corp.
Part No. W982504AH-8H W982504AH-75
OCR Text ...secutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an active command . column addresses are automatically generated by the sdram internal counter in burst ...
Description x4 SDRAM x4内存

File Size 1,377.63K  /  41 Page

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    Winbond Electronics, Corp.
Winbond Electronics Corp
Part No. W981216AH-8H W981216AH-75 W981216AH
OCR Text ...t length: 1, 2, 4, 8 , and full page burst read, single writes mode byte data controlled by udqm and ldqm power-down mode auto-precharge and controlled precharge 4k refresh cycles / 64ms interface: lvttl package: tsop ...
Description    2M x 16 bit x 4 Banks SDRAM
x16 SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54

File Size 2,177.27K  /  44 Page

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