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  rf power dield effect transist Datasheet PDF File

For rf power dield effect transist Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    AH175-WL-B-A AH175-WL-B-B AH175-PL-B-A AH175-PL-B-B AH175-PG-B-A AH175-PG-B-B AH175-WL-A-B AH175 AH175-PG-7-A AH175-PG-7

Diodes, Inc.
磁阻传感
DIODES[Diodes Incorporated]
Diodes Inc.
Part No. AH175-WL-B-A AH175-WL-B-B AH175-PL-B-A AH175-PL-B-B AH175-PG-B-A AH175-PG-B-B AH175-WL-A-B AH175 AH175-PG-7-A AH175-PG-7-B AH175-PG-A-A AH175-PG-A-B AH175-PL-7-A AH175-PL-7-B AH175-PL-A-A AH175-PL-A-B AH175-WG-7-A AH175-WG-7-B AH175-WG-A-A AH175-WG-A-B AH175-WG-B-A AH175-WG-B-B AH175-WL-7-A AH175-WL-7-B AH175-WL-A-A DIODESINC.-AH175-WG-B-A
Description HALL effect LATCH FOR HIGH TEMPERATURE MAGNETIC FIELD SENSOR-HALL effect, -6-6mT, 400mV, RECTANGULAR, THROUGH HOLE MOUNT
HALL effect LATCH FOR HIGH TEMPERATURE 霍尔效应锁存高温

File Size 110.91K  /  8 Page

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    ATS177-PL-B-A ATS177-P ATS177-PL-B-B ATS177-PL-A-A ATS177-PL-A-B ATS177

Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
Part No. ATS177-PL-B-A ATS177-P ATS177-PL-B-B ATS177-PL-A-A ATS177-PL-A-B ATS177
Description SINGLE OUTPUT HALL effect LATCH MAGNETIC FIELD SENSOR-HALL effect, -10-10mT, 700mV, RECTANGULAR, THROUGH HOLE MOUNT
SINGLE OUTPUT HALL effect LATCH 单输出霍尔效应锁

File Size 141.57K  /  8 Page

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    Micronas Semiconductor Holding AG
Part No. HAL115SF-C HAL114SF-C HAL11X HAL115SF-K HAL114SF-K HAL114UA-K
Description Hall effect Sensor Family 霍尔效应传感器系
Hall effect Sensor Family MAGNETIC FIELD SENSOR-HALL effect, -17-11mT, 0.13-0.28V, RECTANGULAR, SUrfACE MOUNT

File Size 127.98K  /  17 Page

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    MRF21045 MRF21045LR3 MRF21045LSR3 MRF21045R3 MRF21045SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
Part No. Mrf21045 Mrf21045LR3 Mrf21045LSR3 Mrf21045R3 Mrf21045SR3
Description rf power Field effect transistors S BAND, Si, N-CHANNEL, rf power, MOSFET
2170 MHz, 45 W, 28 V Lateral N–Channel rf power MOSFET

File Size 546.66K  /  12 Page

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    PTF181301 PTF181301A

INFINEON[Infineon Technologies AG]
Part No. PTF181301 PTF181301A
Description LDMOS rf power Field effect transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS rf power Field effect transistor 130 W/ 1805-1880 MHz

File Size 63.03K  /  4 Page

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    SSM3J01T

Toshiba Semiconductor
Part No. SSM3J01T
Description Field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications
TOSHIBA Field effect transistor Silicon P Channel MOS Type

File Size 157.82K  /  5 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. SSM3J02T
Description TOSHIBA Field effect transistor Silicon P Channel MOS Type
Field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications

File Size 135.95K  /  5 Page

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    SSM5P05FU

Toshiba Semiconductor
Part No. SSM5P05FU
Description Field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications
TOSHIBA Field effect transistor Silicon P Channel MOS Type

File Size 132.28K  /  5 Page

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    ASI[Advanced Semiconductor]
Part No. UFT150-28
Description rf power FIELD-effect transistOR

File Size 29.10K  /  1 Page

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    New Jersey Semi-Conduct...
Part No. MTM3N60
Description power Field effect transistor

File Size 120.95K  /  3 Page

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For rf power dield effect transist Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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