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				Hynix Semiconductor
Part No.	hYMD512M646BKFs8-h
OCR Text	...line dual in-line memory module s (so-dimms) which are organized as 128mx64 high-speed memory arrays. hynix hymd512m646b(l)fs8-j/m/k/h/l series consists of eight 128mx8 ddr sdram in fbga packages on a 200pin glass-epoxy substrate. hynix hy...
Description	Unbuffered DDR sO-DIMM
File Size	388.65K / 19 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8056-h
OCR Text	...mperature (t c = 25 ) (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2) (note 3) (note 4) symbol v dss v gss i d i dp p d p d p d e ...h 3 6. 6. 6. 6. electrical characteristics (t electrical characteristics (t electrical character...
Description	MOsFETs Power MOsFET (N-ch single VDss≤30V)
File Size	230.97K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8052-h
OCR Text	...ansfer admittance: \|y fs \| = 58 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 40 v) ? enhancement mode: v th = 1.3 t...h 2013-11-01 2 thermal characteristics characteristic symbol max unit thermal resistance, chann...
Description	switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
File Size	180.71K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8A02-h
OCR Text	...ansfer admittance: \|y fs \| = 90 s (typ.) ? low leakage current: i dss = 100 a (max) (v ds = 30 v) ? enhancement mode: v th = 1.3 ...h 2010-01-19 2 thermal characteristics characteristic symbol max unit thermal resistance, chann...
Description	Power MOsFET (N-ch single VDss≤30V)
File Size	223.73K / 8 Page	View it Online	Download Datasheet

				Schurter Inc.
Part No.	2572-h-ABC0-D-EGF
OCR Text	... informatio n weblinks approval s , roh s , china-roh s , mating connector s , distributor-stock- chec k , accessorie s technical data ...h \| - \| a \| b \| c \| 0- \| d \| - \| e \| g \| f \| the characters are placeholders for the correspondi...
Description	IEC Appliance Inlet C8, insert Mounting, solder, PCB or Quick-connect Terminal
File Size	334.26K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPC8017-h
OCR Text	... transfer admittance: \|Yfs\| =38 s (typ.) Low leakage current: IDss = 10 A (max) (VDs = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDs = 10 ...h Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note ...
Description	Field Effect Transistor
File Size	317.36K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8006-h
OCR Text	...transfer admittance: \|Yfs\| = 15 s (typ.) Low leakage current: IDss = 100 A (max) (V Ds = 100 V) Enhancement mode: V th = 3.0 to 5.0 V (V Ds ...h Rth (ch-a) 44.6 C/W Thermal resistance, channel to ambient (Note 2b) Rth (ch-a) ...
Description	TOshIBA Field Effect Transistor silicon N Channel MOs Type
File Size	63.15K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8020-h
OCR Text	...transfer admittance: \|Yfs\| = 15 s (typ.) Low leakage current: IDss = 10 A (max) (VDs = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDs = 10 ...h www.Datasheet4U.com Thermal Characteristics Characteristic Thermal resistance, channel to case (...
Description	high Efficiency DC/DC Converter Applications
File Size	433.97K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8055-h
OCR Text	...mperature (t c = 25 ) (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2) (note 3) (note 4) symbol v dss v gss i d i dp p d p d p d e ...h 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal ...
Description	Power MOsFET (N-ch single VDss≤30V)
File Size	258.89K / 9 Page	View it Online	Download Datasheet

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