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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-P1192 Q62702-P1058 BP103BF BP103B Q62702-P85-S4 BP103B-2 BP103B-3 BP103B-4 BP103BF-2 BP103BF-3 BP103BF-4 Q62702-P1057 Q62702-P85-S2 Q62702-P85-S3
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| OCR Text |
.../95) Ordering Code BP 103 B-2 (*sfh 300-2) BP 103 B-3 (*sfh 300-3) BP 103 B-41) (*sfh 300-4) BP 103 BF-2 (*sfh 300 FA-2) BP 103 BF-3 (*sfh 300 FA-3) BP 103 BF-4 (*sfh 300 FA-4)
1)
Gehause Package T13/4, klares bzw. schwarzes Epoxy-Gieha... |
| Description |
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter PHOTO TRANSISTOR DETECTOR
TVS BIDIRECT 600W 9.0V SMB PHOTO TRANSISTOR DETECTOR
NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silizium - Fototransistor东北大学：叩- Silizium - Fototransistor麻省理工Tageslichtsperrfilter
TVS ZENER BIDIRECT 600W 85V SMB
From old datasheet system
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| File Size |
162.77K /
5 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
sfh464E7800 sfh464 Q62702-Q1745
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| OCR Text |
sfh 464
o0.45
2.54 mm spacing
Chip position
o4.3 o4.1
1 0.9 .1 1.1 .9 0
2.7
1
14.5 12.5
3.6 3.0
o5.5 o5.2
GET06625
Anode (LD 242, BPX 63, sfh 464) Cathode (sfh 483) Approx. weight 0.5 g
Mae in mm, wenn nicht... |
| Description |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
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| File Size |
39.47K /
5 Page |
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it Online |
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ETC[ETC]
OSRAM[OSRAM GmbH]
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| Part No. |
sfh5140F sfh5140 sfh5141F
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| OCR Text |
sfh 5140 F sfh 5141 F
Wesentliche Merkmale * Integrierter Schmitt-Trigger * sfh 5140 F: Output active low * sfh 5141 F: Output active high * Miniatur-Gehause Anwendungen * Optischer Schalter * Pulsformer * Zahler * Empfanger in Lichtschr... |
| Description |
Schmitt-Trigger IC im Mini-Sidelooker Geh?use mit Linse Schmitt-Trigger IC in Miniature Sidelooker Package with Lens
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| File Size |
47.85K /
6 Page |
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it Online |
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Siemens Group
SIEMENS AG
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| Part No. |
LD242E7800 Q62703-Q3509 LD242 LD242-2 LD242-3 Q62703-Q198 Q62703-Q199
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| OCR Text |
...06625
Anode (LD 242, BPX 63, sfh 464) Cathode (sfh 483) Approx. weight 0.5 g
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q GaAs-IR-Lumineszenzdiode, hergestellt im q q ... |
| Description |
GaAs Infrared Emitter
DSUB 11X1 M PCB G30 砷化镓红外发射器
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| File Size |
38.62K /
5 Page |
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it Online |
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Price and Availability
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