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  sink source Datasheet PDF File

For sink source Found Datasheets File :: 46782    Search Time::3.125ms    
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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...JA RJA Junction-to-Case Case-to-sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) Typ. --- 0.50 --- --- ...source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) ID...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...meter Junction-to-Case Case-to-sink, Flat Greased Surface Junction-to-Ambient Typ. Max. 0.45 --- 62 40 Units C/W Junction-to-...source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-source On-Resistance Ga...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...CS RJA Junction-to-Case Case-to-sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W ...source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-source On-Resistance Ga...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...CS RJA Junction-to-Case Case-to-sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 0.75 --- 62 Units C/W ...source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-source On-Resistance Ga...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...CS RJA Junction-to-Case Case-to-sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 1.4 --- 62 Units C/W 3...source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-source On-Resistance Ga...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...ristic Junction-to-Case Case-to-sink Junction-to-Ambient Typ. -0.5 -Max. 2.74 -62.5 Units C /W Rev. B (c)1999 Fairchild Semicond...source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-source Leakage ,...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ...20 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 T O-220FI 3.75 o o o C/W C/W C/W o C Ther...source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 100 1 10 100 Typ. Max. Unit V A...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ...ATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case...source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 600 1 10 100 Typ. Max. Unit V A A...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...CS RJA Junction-to-Case Case-to-sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous source Current (Body Diode) Pulsed source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward ...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ...ax. Thermal Resistance, Case-to-sink Typ. Thermal Resistance, Junction-to-Ambient Max. IRF840B 0.93 0.5 62.5 IRFS840B 2.86 -62.5 Units C/W C...source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current G...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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For sink source Found Datasheets File :: 46782    Search Time::3.125ms    
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