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  v 400v Datasheet PDF File

For v 400v Found Datasheets File :: 11313    Search Time::2.922ms    
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    TS1300507 TS13005CI TS13005CZ TS13005-07

Taiwan Semiconductor Co...
Taiwan Semiconductor Company, Ltd
Part No. TS1300507 TS13005CI TS13005CZ TS13005-07
OCR Text ...5 30 +150 - 55 to +150 Unit v v v A A W o o C C 1/6 version: B07 TS13005 High voltage NPN Transistor Electrical Specifica...400v, IB=0 vCB =700v, IE =0 vEB = 9v, IC =0 IC=1A, IB =0.2A IC=2A, IB =0.5A IC=4A, IB =1A Base-Emitt...
Description    High voltage NPN Transistor

File Size 364.42K  /  6 Page

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    IRGP4266PBF

International Rectifier
Part No. IRGP4266PBF
OCR Text ... parameter max. units v ces collector - to - emitter voltage 650 v i c @ t c = 25c continuous collector current 14...400v e on turn - on switching loss 3.2 4.2 e off turn - off switching loss ...
Description Insulated Gate Bipolar Transistor

File Size 880.51K  /  11 Page

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    IRGP4266DPBF

International Rectifier
Part No. IRGP4266DPBF
OCR Text ...gs parameter max. units v ces collector-to-emitter voltage 650 v i c @ t c = 25c continuous collector current 140 a ? i c ...400v e on turn-on switching loss ? 2.5 3.4 mj ? i c = 75a, v cc = 400v, v ge =1...
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

File Size 753.64K  /  12 Page

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    IRGP4262DPBF IRGP4262D-EPBF

International Rectifier
Part No. IRGP4262DPBF IRGP4262D-EPBF
OCR Text ...gs parameter max. units v ces collector-to-emitter voltage 650 v i c @ t c = 25c continuous collector current 60 a i c ...400v e on turn-on switching loss ? 520 740 j i c = 24a, v cc = 400v, v ge =15...
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

File Size 678.44K  /  12 Page

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    IXYS CORP
Part No. GX60N60C2D1
OCR Text ...rwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c 650 a v ge = 0 v t j = 12...400v i c = 50a i c = 1 00a fig. 9. dependence of e off on i c 0 1 2 3 4 5 20 30 40 50 60 70 ...
Description Fast SRAM &gt; Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (v): 150; Operating temperature (&#176;C): 1.5; Package: BGA (119)

File Size 615.83K  /  5 Page

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    TS13003B07 TS13003B TS13003BCT

Taiwan Semiconductor Compan...
Taiwan Semiconductor Company, Ltd
Part No. TS13003B07 TS13003B TS13003BCT
OCR Text ... 1.5 +150 - 55 to +150 Unit v v v A W o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance Symbol R...400v, IB = 0 vCE = 400v, IB = 0 vCB = 700v, IE = 0 vCB = 700v, IE = 0 vEB = 9v, IC = 0 IC / IB = 0.5...
Description High voltage NPN Transistor

File Size 321.74K  /  6 Page

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    LRD3357 LRD3359 LRD14 LRD10 LRD01 LRD02 LRD03 LRD04 LRD06 LRD07 LRD08 LRD21 LRD32 LRD318 LRD325 LRD332 LRD3322 LRD3361

List of Unclassifed Manufacturers
Part No. LRD3357 LRD3359 LRD14 LRD10 LRD01 LRD02 LRD03 LRD04 LRD06 LRD07 LRD08 LRD21 LRD32 LRD318 LRD325 LRD332 LRD3322 LRD3361
OCR Text ...amperes n.o. n.c. n.o. n.c. 115 v hp 230 v hp 200 v hp 230 v hp 460 v hp 575 v hp ac coils dc coils 0.51 2 2 57.59 20 3 0 11 lc1d09 cde 94.00 119.00 ??????? 4 lc1dt20 c 94.00 119.00 ??????? 22 lc1d098 c 94.00 119.00 12337.51012 25 3 0...
Description TeSys? IEC Contactors and Starters

File Size 5,932.30K  /  56 Page

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    IRAM136-3063B

International Rectifier
Part No. IRAM136-3063B
OCR Text ... Ratings Parameter vCES / vRRM v+ IO @ TC=25C IO @ TC=100C IO FPWM PD vISO TJ (IGBT & Diode & IC) TC TSTG T Description IGBT/Diode Blocking...400v, TJ=150C, FPWM=6kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms; TC=25C; FPWM...
Description Integrated Power Hybrid IC for Low voltage Motor Applications

File Size 212.43K  /  16 Page

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    STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB25NM50N07 STB25NM50N

STMicroelectronics
Part No. STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB25NM50N07 STB25NM50N
OCR Text ... at TC = 25C Derating factor v v v A A A W W/C v v/ns C C 88 (1) 40 0.32 2500 PTOT vISO dv/dt (3) Tstg Tj Insulation withstan...400v, Id=25A, vgs=10v vDS = Max rating vDS = Max rating, @125C vGS = 20v vDS = vGS, ID = 250A vGS =...
Description N-channel 500v - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 500v - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 500v - 0.11楼? - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 500v - 0.11ヘ - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET

File Size 485.98K  /  18 Page

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    STD7NM50N-1 STP7NM50N STF7NM50N STD7NM50N

STMicroelectronics
Part No. STD7NM50N-1 STP7NM50N STF7NM50N STD7NM50N
OCR Text ...) 3 (1) 20 (1) 20 Unit TO-220FP v v A A A W v/ns v vDS vGS ID ID IDM (2) PTOT dv/dt (3) vISO Tj Tstg Drain-source voltage (vGS=0) Gate...400v, Id = 5A, vgs = 10v vDS = Max rating, vDS = Max rating,Tc = 125C vGS = 20v vDS= vGS, ID = 250A ...
Description N-channel 500v - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET
N-channel 500v - 0.70楼? - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh垄芒 Power MOSFET
N-channel 500v - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET

File Size 402.17K  /  17 Page

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