| |
|
 |
INTERSIL[Intersil Corporation]
|
| Part No. |
JANSR2N7411 FN4493
|
| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte... |
| Description |
2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET
2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET
From old datasheet system
|
| File Size |
44.68K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
FRL130R FN3218 FRL130D FRL130H
|
| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ... |
| Description |
8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFETs
|
| File Size |
47.21K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
FRL9130R FN3239 FRL9130D FRL9130H
|
| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ... |
| Description |
5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs 0.55 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
5A/ -100V/ 0.550 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
| File Size |
46.82K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FRM9130R FN3262 M9130 FRM9130D FRM9130H
|
| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ... |
| Description |
6A / -100V / 0.550 Ohm / Rad Hard / P-Channel Power MOSFETs
From old datasheet system
6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs
6A/ -100V/ 0.550 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
| File Size |
56.90K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FRS9130R FN3240 FRS9130D FRS9130H
|
| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ... |
| Description |
6A/ -100V/ 0.565 Ohm/ Rad Hard/ P-Channel Power MOSFETs
6A, -100V, 0.565 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system
|
| File Size |
48.59K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
FSL9130R FN4083 FSL9130R4 FSL9130D FSL9130D1 FSL9130D3 FSL9130R1 FSL9130R3 FSL913A0R
|
| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte... |
| Description |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
CAP 1000UF 200V ELECT TS-HB 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
| File Size |
45.02K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FSS9130R FN4082 FSS9130R4 FSS9130D FSS9130D1 FSS9130D3 FSS9130R1 FSS9130R3
|
| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte... |
| Description |
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system
|
| File Size |
44.30K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FSYC360D FSYC360R4 FSYC360D1 FSYC360R FSYC360R3
|
| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
|
| File Size |
76.16K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FRS9140H FRS9140R FRS9140D FN3264
|
| OCR Text |
...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ... |
| Description |
11 A, 100 V, 0.315 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs
11A/ -100V/ 0.315 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
| File Size |
47.82K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
