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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
IRF9540 RF1S9540SM FN2282
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| OCR Text |
...nt On-State Drain Current (Note 2) Gate to Source Leakage Current
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) ...6mm (0.25in) from Package to the Center of Die Modified MOSFET Symbol Showing the Internal Devices I... |
| Description |
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system
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| File Size |
59.17K /
7 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
JANTXV2N6845 2N6845 JANTX2N6845
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| OCR Text |
...6845, JANTXV2N6845 Units
-4.0 -2.6 -16 20 0.16 20 -5.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 0.98 (typical)
A
W W/K V V/ns
o
C
g
To Order
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JANTX2N68... |
| Description |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) 功率MOSFET P沟道BVdss \u003d- 100V的，的Rds（on）\u003d 0.60ohm，身份证\u003d- 4.0a上）
POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
Dual Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 14-PDIP -40 to 125
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| File Size |
195.45K /
6 Page |
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HOKURIKU ELECTRIC INDUSTRY CO.,LTD
HOKURIKU ELECTRIC INDUSTRY CO LTD
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| Part No. |
KSMC632A KSM0633C
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| OCR Text |
... model designation ksmc6 3 2 a operating force a,b key length mounting type mod...6mm 6mm side push general 4.50.1 2.50.1 70.1 2-1.30.05 dia. 2-10.05 dia. b a moving contact 6.0 a b... |
| Description |
Tactile Switches
KEYPAD SWITCH, SPST, MOMENTARY-TACTILE, 0.05A, 24VDC, 3.24 N, THROUGH HOLE-RIGHT ANGLE
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| File Size |
209.44K /
2 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
JANTXV2N6851 JANTX2N6851
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| OCR Text |
...6851, JANTXV2N6851 Units
-4.0 -2.4 -16 25 0.20 20 -5.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 0.98 (typical)
oC
A
W W/K V V/ns
g
To Order
Previous Datasheet
Index
Next Data Sheet
JANTX2N6851, ... |
| Description |
POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A) 功率MOSFET P沟道（BVdss \u003d-00V，的Rds（on）\u003d 0.80ohm，身份证\u003d- 4.0a上）
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| File Size |
196.87K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
JANTXV2N7219 IRFM240 JANTX2N7219
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| OCR Text |
...3 in.(1.6mm) from case for 10s) 2.6 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
1/29/02
IRFM240
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source ... |
| Description |
POWER MOSFET THRU-HOLE (TO-254AA)
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| File Size |
187.27K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
JANTXV2N7227 IRFM350 JANTX2N7227
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| OCR Text |
...o the last page 14 9.0 56 150 1.2 20 700 14 15 4.0 -55 to 150 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
1/29/02
IRFM350
Electrical Characteristics @ ... |
| Description |
400V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET THRU-HOLE (TO-254AA)
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| File Size |
199.73K /
7 Page |
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