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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
2N5306
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| OCR Text |
...h current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C... |
| Description |
NPN Darlington Transistor
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| File Size |
22.97K /
2 Page |
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it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
2N5307
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| OCR Text |
...h current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C... |
| Description |
NPN Darlington Transistor
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| File Size |
22.96K /
2 Page |
View
it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
2N5308
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| OCR Text |
...h current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C... |
| Description |
NPN Darlington Transistor
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| File Size |
22.96K /
2 Page |
View
it Online |
Download Datasheet |
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ON Semi
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| Part No. |
2N6400 ON0094
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| OCR Text |
...Peak Gate Power (Pulse Width 1.0 s, TC = 100C) Forward Average Gate Power (t = 8.3 ms, TC = 100C) Forward Peak Gate Current (Pulse Width 1.0 s, TC = 100C) Operating Junction Temperature Range Storage Temperature Range *Indicates JEDEC Reg... |
| Description |
Sllllcon Controlled Roctlflers
From old datasheet system
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| File Size |
114.54K /
8 Page |
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it Online |
Download Datasheet |
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ON Semi
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| Part No. |
2N7002LT1 ON0107
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| OCR Text |
...age Drain-Gate Voltage (RGS = 1.0 M) Drain Current -- Continuous TC = 25C(1) Drain Current -- Continuous TC = 100C(1) Drain Current -- Pulsed(2) Gate-Source Voltage -- Continuous -- Non-repetitive (tp 50 s) Symbol VDSS VDGR ID ID IDM VGS V... |
| Description |
Motorola Preferred Device
From old datasheet system
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| File Size |
93.25K /
6 Page |
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it Online |
Download Datasheet |
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hitachi
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| Part No. |
2SA10832SA10842SA1085 2SA1083
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| OCR Text |
...EBO
1
2SA1084 Max -- -- -- -0.1 -0.1 800 -0.2 Min -90 -90 -5 -- -- 250 -- -- -- -- -- Typ Max -- -- -- -- -- -- -- -- -- -- -0.1 -0.1 800 -0.2
2SA1085 Min Typ Max -- -- -- -0.1 -0.1 800 -0.2 V V Unit Test conditions V V V A A IC = -1... |
| Description |
Silicon PNP Epitaxial
From old datasheet system
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| File Size |
52.59K /
6 Page |
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it Online |
Download Datasheet |
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hitachi
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| Part No. |
2SA1350
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| OCR Text |
...- -- -- -- -- -- -- -- 200 -- 1.0
Max -- -- -- -0.5 -0.5 500 -0.75 -0.2 -- 4.5 5.0
Unit V V V A A
Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -18 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC = ... |
| Description |
Silicon PNP Epitaxial
From old datasheet system
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| File Size |
17.29K /
4 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SA1417
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| OCR Text |
...E(sat) VBE(sat) VCB=(-)100V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)100mA VCE=(-)10V, IC=(-)100mA VCB=(-)10V, f=1MHz IC=(-)1A, IB=(-)100mA 100* 120 (25) 16 (-0.22) 0.13 IC=(-)1A, IB=(-)100mA V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= ... |
| Description |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors
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| File Size |
140.05K /
4 Page |
View
it Online |
Download Datasheet |
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