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  0.37a Datasheet PDF File

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    K3709

Sanyo Semicon Device
Part No. K3709
OCR Text ...lowable power dissipation p d 2.0 w tc=25 c35w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche enargy (si...37a *2 l 500 m h, single pulse electrical characteristics at ta=25 c ratings parameter symbol co...
Description Search --To 2SK3709

File Size 61.12K  /  4 Page

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    IRFB61N15DPBF

International Rectifier
Part No. IRFB61N15DPBF
OCR Text ...l VDSS 150V RDS(on) max 0.032 ID 60A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Cap...37A 140 ID = 37A 39 nC VDS = 120V 68 VGS = 10V, --- VDD = 75V --- ID = 37A ns --- R G = 1.8 --- VGS ...
Description HEXFET Power MOSFET

File Size 163.71K  /  8 Page

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    APT4012BVFR APT4012SVFR APT4012BVFRG

Microsemi, Corp.
Advanced Power Technology
Part No. APT4012BVFR APT4012SVFR APT4012BVFRG
OCR Text 0.120 D3PAK POWER MOS V (R) FREDFET TO-247 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode powe...37A @ 25C VGS = 15V VDD = 200V ID = 37A @ 25C RG = 1.6 MIN TYP MAX UNIT pF 4500 690 290 195 25 90...
Description Power FREDFET; Package: TO-247 [B]; ID (A): 37; RDS(on) (Ohms): 0.12; BVDSS (V): 400; 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET

File Size 69.93K  /  4 Page

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    NXP Semiconductors N.V.
Part No. PSMN027-100PS
OCR Text ... drain-source voltage 003aae041 0 10 20 30 40 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p der (%) 0 003aae042 10 ?1 1 10 10 2 10 3 1 10 10 2 10 3 v ds (v) i d (a) limit ...
Description N-channel 100V 26.8 m standard level MOSFET in TO220.

File Size 202.57K  /  14 Page

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    NXP Semiconductors N.V.
Part No. PSMN011-30YLC
OCR Text ...ion of avalanche time 003aag215 0 10 20 30 40 0 50 100 150 200 t mb ( c) i d (a) t mb (c) 0 200 150 50 100 03na19 40 80 120 p der (%) 0 003aag216 10 -1 1 10 10 2 10 -3 10 -2 10 -1 1 10 t al (ms) i al (a) (1) (2) psmn...
Description N-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technology
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology

File Size 310.74K  /  15 Page

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    IRFU48Z

International Rectifier
Part No. IRFU48Z
OCR Text ... IRFR48Z Max. 62 44 42 250 91 0.61 20 I-Pak IRFU48Z Units A Absolute Maximum Ratings Parameter I D @ T C = 25C Continuous Drain...37A VDS = 25V, ID = 37A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID =...
Description AUTOMOTIVE MOSFET

File Size 331.97K  /  11 Page

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    HUF76432P3 HUF76432S3S

Fairchild Semiconductor
Part No. HUF76432P3 HUF76432S3S
OCR Text 0.019 Ohm, N-Channel, Logic Level UltraFET(R) Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC ...37A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resist...
Description 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

File Size 213.31K  /  10 Page

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    STW75NF20

STMicroelectronics
Part No. STW75NF20
OCR Text 0.028 ? - 75a - d 2 pak - to-220 - to-247 low gate charge stripfet? power mosfet general features exceptional dv /dt capability low gate ...37a 0.028 0.034 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. ...
Description N-channel Power MOSFET

File Size 527.97K  /  16 Page

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    IRL3102S IRL3102STRL IRL3102STRR

International Rectifier
Part No. IRL3102S IRL3102STRL IRL3102STRR
OCR Text ...ion 89 w linear derating factor 0.71 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy ?? 220 mj i ar avalanche cur...37a ? CCC CCC 0.013 w v gs = 7.0v, i d = 37a ? v gs(th) gate threshold voltage 0.70 CCC CCC v v ...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 96.05K  /  8 Page

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