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For 1-cell Found Datasheets File :: 31477 Search Time::8.453ms
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				Linear Technology
Part No.	LTC2942-1-15
OCR Text	1 29421f typical a pplica t ion descrip t ion 1a battery gas gauge with internal sense resistor and temperature/voltage measurement t...cell li-ion batteries. a precision coulomb counter integrates current through an internal sen...
Description	1A Battery Gas Gauge with Internal Sense Resistor and Temperature/Voltage Measurement
File Size	224.27K / 16 Page	View it Online	Download Datasheet

				ADVANCED MICRO DEVICES INC PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
Part No.	AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F010-120DGI1 AM29F010-120DPC1 AM29F010-120DPE1 AM29F010-120DPI1 AM29F010-120DTC1 AM29F010-120DTE1 AM29F010-120DTI1 AM29F010-120DWC1 AM29F010-120DWE1 AM29F010-120DWI1 AM29F010-9 AM29F010-90DGC1 AM29F010-90DWI1 AM29F010-90DGE1 AM29F010-90DGI1 AM29F010-90DPC1 AM29F010-90DPE1 AM29F010-90DPI1 AM29F010-90DTC1 AM29F010-90DTE1 AM29F010-90DTI1 AM29F010-90DWC1 AM29F010-90DWE1 AM29F010B-90DTC1 AM29F010-120DTI AM29F010B-90DTI1 AM29F010B-90DPI1 AM29F010-120DTC AM29F010B-90DPC1 AM29F010-120DPC AM29F010B-90DTE1 AM29F010B-90DGI1
OCR Text	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory--Die Revision 1 DISTINCTIVE CHARACTERISTICS s Single power suppl...cell margin. Device erasure occurs by executing the erase command sequence. This invokes the Embedde...
Description	1 megabit CMOS 5.0 volt-only, uniform sector flash memory- die revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash MemoryDie Revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC30 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 90 ns, UUC30 Evaluation Board for LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers 128K X 8 FLASH 5V PROM, 90 ns, UUC30 LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers; Package: MICRO SMD; No of Pins: 8 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory-Die Revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory-Die Revision 1
File Size	55.30K / 8 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	ADG3308-1-15
OCR Text	1. 15 v to 5.5 v, 8 - channel bidirectional logi c level translator s data sheet adg3308 / adg3308 - 1 rev. d document f...cell phones and cell phone cradles portable communication devic es telecommunications equipment ...
Description	Low Voltage, 1.15 V to 5.5 V, 8-Channel Bidirectional Logic Level Translators
File Size	516.32K / 20 Page	View it Online	Download Datasheet

				AAT[Advanced Analog Technology, Inc.]
Part No.	AAT3687IWP-4.2-1-T1 AAT3687IWP-4.2-T1 AAT3687IWP-4.2-2-T1 AAT3687
OCR Text	...t rates can be programmed up to 1.5A. An active thermal management system regulates the fast charge constant current for all ambient tempera...cell lithiumion/polymer battery charger IC designed to operate with standard AC adapter input source...
Description	Lithium-Ion/Polymer Battery Charger
File Size	512.78K / 22 Page	View it Online	Download Datasheet

				Linear
Part No.	LT1615-1 LT1615ES5
OCR Text	1 Micropower Step-Up DC/DC Converters in ThinSOT FEATURES s DESCRIPTIO s s s s s Low Quiescent Current: 20A in Active Mode <1A ...cell applications with a 100mA current limit and an extended input voltage range of 1V to 15V. Other...
Description	100mA Micropower Step-Up DC/DC Converters in SOT-23 Micropower Step-Up DC/DC Converters in ThinSOT
File Size	156.57K / 8 Page	View it Online	Download Datasheet

				AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. PROM ADVANCED MICRO DEVICES INC
Part No.	AM29F100-1 AM29F100B-120DGC AM29F100B-120DGC1 AM29F100B-120DGE AM29F100B-120DGE1 AM29F100B-120DGI AM29F100B-120DGI1 AM29F100B-120DPC AM29F100B-120DPC1 AM29F100B-120DPE AM29F100B-120DPE1 AM29F100B-120DPI AM29F100B-120DPI1 AM29F100B-120DTC AM29F100B-120DTC1 AM29F100B-120DTE AM29F100B-120DTE1 AM29F100B-120DTI AM29F100B-120DTI1 AM29F100B-120DWC AM29F100B-120DWC1 AM29F100B-120DWE AM29F100B-120DWE1 AM29F100B-120DWI AM29F100B-120DWI1 AM29F100T-120DGC AM29F100T-120DGC1 AM29F100T-120DWI1 AM29F100T-120DGE AM29F100T-120DGE1 AM29F100T-120DGI AM29F100T-120DGI1 AM29F100T-120DPC AM29F100T-120DPC1 AM29F100T-120DPE AM29F100T-120DPE1 AM29F100T-120DPI AM29F100T-120DPI1 AM29F100T-120DTC AM29F100T-120DTC1 AM29F100T-120DTE AM29F100T-120DTE1 AM29F100T-120DTI AM29F100T-120DTI1 AM29F100T-120DWC AM29F100T-120DWC1 AM29F100T-120DWE AM29F100T-120DWE1 AM29F100T-120DWI AM29F100B-120DGI1B
OCR Text	1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory--Die Revision 1 DISTINCTIVE CHARACTERISTICS s Single ...cell margin. Device erasure occurs by executing the erase command sequence. This invokes the Embedde...
Description	1 megabit CMOS 5.0 volt-only, boot sector flash memory 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1 Hex Inverters 14-VQFN -40 to 85 1兆位28x 8-Bit/64x 16位）.0伏的CMOS只，引导扇区快闪记忆体模修订1 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC47 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 1兆位28亩x 8-Bit/64亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体模修订1 Hex Inverters 14-TSSOP -40 to 85 1兆位28亩x 8-Bit/64亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体模修订1
File Size	56.22K / 8 Page	View it Online	Download Datasheet

				AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
Part No.	AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 AM29F200AB-120DGE AM29F200AB-120DGE1 AM29F200AB-120DGI AM29F200AB-120DGI1 AM29F200AB-120DPC AM29F200AB-120DPC1 AM29F200AB-120DPE AM29F200AB-120DPE1 AM29F200AB-120DPI AM29F200AB-120DPI1 AM29F200AB-120DTC AM29F200AB-120DTC1 AM29F200AB-120DTE AM29F200AB-120DTE1 AM29F200AB-120DTI AM29F200AB-120DTI1 AM29F200AB-120DWC AM29F200AB-120DWC1 AM29F200AB-120DWE AM29F200AB-120DWE1 AM29F200AB-120DWI AM29F200AB-120DWI1 AM29F200AB-90DGC AM29F200AT-90DGC AM29F200AT-90DGC1 AM29F200AT-90DGE AM29F200AT-90DGE1 AM29F200AT-90DGI AM29F200AT-90DGI1 AM29F200AT-90DPC AM29F200AT-90DPC1 AM29F200AT-90DPE AM29F200AT-90DPE1 AM29F200AT-90DPI AM29F200AT-90DPI1 AM29F200AT-90DTC AM29F200AT-90DTC1 AM29F200AT-90DTE AM29F200AT-90DTE1 AM29F200AT-90DTI AM29F200AT-90DTI1 AM29F200AT-90DWC AM29F200AT-90DWC1 AM29F200AT-90DWE AM29F200AT-90DWE1 AM29F200AT-90DWI AM29F200AT-90DWI1 AM29F200AT-120DGC AM29F200AB-90DGC1 AM29F200AB-90DGE AM29F200AB-90DGE1 AM29F200AB-90DGI AM29F200AB-90DGI1 AM29F200AB-90DPC AM29F200AB-90DPC1 AM29F200AB-90DPE AM29F200AB-90DPE1 AM29F200AB-90DPI AM29F200AB-90DPI1 AM29F200AB-90DTC AM29F200AB-90DTC1 AM29F200AB-90DTE AM29F200AB-90DTE1 AM29F200AB-90DTI AM29F200A
OCR Text	...ored Flash Memory--Die Revision 1 DISTINCTIVE CHARACTERISTICS s 5.0 V 10% for read and write operations -- Minimizes system level power r...cell margin. Device erasure occurs by executing the erase command sequence. This initiates the Embed...
Description	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1 PCB COPPER CLAD 6X9 1/32 2-SIDE DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修 M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
File Size	117.41K / 8 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LTC4085-1-15
OCR Text	1 1 40851fa i load (ma) 0 600 500 400 300 200 100 0 C100 300 500 40851 ta01b 100 200 400 600 current (ma) i load i in i bat (charging) i ba...cell li-ion batter- ies. this 4.1v version of the standard ltc4085 is intended for applications whi...
Description	USB Power Manager with Ideal Diode Controller and 4.1V Li-Ion Charger
File Size	290.64K / 24 Page	View it Online	Download Datasheet

				5 LINER[Linear Technology] Linear Technology Corporation http:// Linear Technology, Corp.
Part No.	LT3468-1 LT3468ES5 LT3468ES5-1 LT3468 LINEARTECHNOLOGYCORPORATION-LT3468-1
OCR Text	1 Photoflash Capacitor Charger in ThinSOT TM October 2003 FEATURES s s DESCRIPTIO s s s s s s s Highly Integrated IC ...Cell, or Any Supply from 2.5V up to 16V Adjustable Output Voltage No Output Voltage Divider Needed C...
Description	Photoflash Capacitor Charger in ThinSOT Linear Technology Photoflash Capacitor Charger in ThinSOT SPECIALTY ANALOG CIRCUIT, PDSO5
File Size	298.59K / 12 Page	View it Online	Download Datasheet

				Turbo IC
Part No.	28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28C256ASI-1 28C256ASI-2 28C256ASI-3 28C256ASI-4 28C256API-1 28C256API-2 28C256API-3 28C256API-4 28C256AJM-1 28C256AJM-2 28C256AJM-3 28C256AJM-4 28C256AJI-2 28C256ATI-2 28C256ATC-4 28C256ATC-2 28C256ATC-1 28C256APC-1 28C256APM-2 28C256APM-4 28C256ATM-4 28C256ATM-2 28C256AJC-4 28C256AJC-1 28C256AJC-2 28C256ATM-3 28C256ATM-1
OCR Text	... a write cycle, the address and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other microprocessor oper...cell for extended data retention and endurance. write enable (we) the write enable input initiates t...
Description	High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
File Size	42.09K / 4 Page	View it Online	Download Datasheet

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