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  1.085 Datasheet PDF File

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    MSA-0635 MSA-0636 MSA0635

Agilent (Hewlett-Packard)
Electronic Theatre Controls, Inc.
ETC[ETC]
HP[Agilent(Hewlett-Packard)]
List of Unclassifed Manufacturers
Part No. MSA-0635 MSA-0636 MSA0635
OCR Text ...MSA-0636. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. Description The MSA-0635 is a high perfor...085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS 3 .020 .508 2 GROUND Notes: (unless otherwise sp...
Description Cascadable Silicon Bipolar MMIC Amplifiers 级联硅双极单片?放大
(MSA-0635 / MSA-0636) Cascadable Silicon Bipolar MMIC Amplifier

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    MSA-0685 MSA0685

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. MSA-0685 MSA0685
OCR Text ... RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 3.5 V 2 5965-9587E 6-378 MSA-0685 Absolute Maximum Ratings Parameter...085 2.15 2 .060 .010 1.52 .25 5 TYP. .07 0.43 .286 .030 7.36 .76 6-381 ...
Description Cascadable Silicon Bipolar MMIC Amplifier

File Size 45.33K  /  4 Page

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    MSA-0686 MSA-0686-BLK MSA-0686-TR1 MSA0686

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. MSA-0686 MSA-0686-BLK MSA-0686-TR1 MSA0686
OCR Text ...pe-and-Reel Packaging Available[1] Note: 1. Refer to PACKAGING section "Tapeand-Reel Packaging for Surface Mount Semiconductors". Descri...085 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-385 ...
Description Cascadable Silicon Bipolar MMIC Amplifier

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    SI9933ADY

Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Part No. SI9933ADY
OCR Text ... S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSO...085 8 -0.7 -1.2 0.075 0.105 0.115 S V W -0.8 "100 -1 -3 V nA mA Symbol Test Condition Min ...
Description Dual P-Channel 20-V (D-S) MOSFET P沟道20 - V(下局副局长)MOSFET

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    SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

INFINEON[Infineon Technologies AG]
Part No. SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
OCR Text ... transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO263-3-2 650 0.6 7.3 V A P-TO220-3-31 P-TO220-3...085 0.308 0.317 0.112 Tj P tot (t) C th1 C th2 C th,n T am b Symbol IS ISM VSD trr Qrr Irrm dirr...
Description Cool MOS⑩ Power Transistor
Cool MOS Power Transistor

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    SPB07N60S5 SPDU07N60S5 SPI07N60S5 SPP07N60S5 SPPBI07N60S5

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INFINEON[Infineon Technologies AG]
Part No. SPB07N60S5 SPDU07N60S5 SPI07N60S5 SPP07N60S5 SPPBI07N60S5
OCR Text ...ved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.6 7.3 V A P-TO220-3-1 2 1 23 Type Pack...085 0.308 0.317 0.112 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitan...
Description Cool MOS?/a> Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses

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    SPD07N60C3 SPU07N60C3

INFINEON[Infineon Technologies AG]
Part No. SPD07N60C3 SPU07N60C3
OCR Text 1 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO-251 and TO-252 * Ultra ...085 0.308 0.317 0.112 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00012 Unit ...
Description Cool MOS& Power Transistor
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 284.83K  /  12 Page

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    SPD07N60S5 SPU07N60S5

INFINEON[Infineon Technologies AG]
Part No. SPD07N60S5 SPU07N60S5
OCR Text ... VDS RDS(on) ID P-TO252. 2 3 1 600 0.6 7.3 P-TO251. V A * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rat...085 0.308 0.317 0.112 K/W Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00012 0.0004578 0.0...
Description for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

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    08090 PTF080901 PTF080901E PTF080901F 8090

INFINEON[Infineon Technologies AG]
Infineon Technologies A...
Part No. 08090 PTF080901 PTF080901E PTF080901F 8090
OCR Text ...ection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output...085 0.195 x 0.053 Electrical Characteristics at 960 MHz 0.075 , 50 0.101 , 50 0.053 , 50 0.289...
Description    LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

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    1SMB22AT3 1SMB24AT3 1SMB18AT3 1SMB6.0AT3 1SMB5.0AT3 1SMB51AT3 1SMB14AT3 1SMB30AT3 1SMB16AT3 1SMB36AT3 1SMB54AT3 1SMB15AT

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MOTOROLA[Motorola, Inc]
ON Semi
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. 1SMB22AT3 1SMB24AT3 1SMB18AT3 1SMB6.0AT3 1SMB5.0AT3 1SMB51AT3 1SMB14AT3 1SMB30AT3 1SMB16AT3 1SMB36AT3 1SMB54AT3 1SMB15AT3 1SMB40AT3 1SMB58AT3 1SMB50AT3 1SMB6.5AT3 1SMB7.0AT3 ON0030 1SMB90AT3 1SMB100AT3 1SMB10AT3 1SMB110AT3 1SMB11AT3 1SMB120AT3 1SMB12AT3 1SMB130AT3 1SMB13AT3 1SMB150AT3 1SMB160AT3 1SMB170AT3 1SMB17AT3 1SMB20AT3 1SMB26AT3 1SMB28AT3 1SMB33AT3 1SMB43AT3 1SMB45AT3 1SMB48AT3 1SMB60AT3 1SMB64AT3 1SMB7.5AT3 1SMB70AT3 1SMB75AT3 1SMB78AT3 1SMB8.0AT3 1SMB8.5AT3 1SMB85AT3 1SMB9.0AT3
OCR Text ...170 V Peak Power -- 600 Watts @ 1 ms Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 A Above 10 V UL Recognition Response Time Ty...085 2.159 inches mm SMB Footprint NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198...
Description From old datasheet system
600 WATT PEAK POWER
PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

File Size 51.05K  /  5 Page

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