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DYNEX[Dynex Semiconductor]
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| Part No. |
DGT409BCA6565 DGT409BCA
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| OCR Text |
1 February 2002
APPLICATIONS
The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking...270A typical diGQ/dt = 30A/s QGQ = 2200C VRG(min) = 2V VRG(max) = 15V
These are recommended Dynex... |
| Description |
Reverse Blocking Gate Turn-off Thyristor
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| File Size |
60.78K /
11 Page |
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IRF[International Rectifier]
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| Part No. |
HFA120FA60
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| OCR Text |
1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/s
K1
A1
HFA120FA60
Features
Fast Recovery time characteristic Eletrically isolated base plate Large creepage distance bet... |
| Description |
HEXFRED ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
848.65K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRLL024N IRLL024NPBF IRLL024NTR
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| OCR Text |
...atsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parame...270A/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 25 mH
RG = 25, IAS = 3.1A. (See Figure ... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??)
4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
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| File Size |
113.26K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
HFA200MD40D
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| OCR Text |
...of Recovery Parameters
Anode 1
AC
Cathode 2
Isolated Base
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery beha... |
| Description |
Ultrafast, Soft Recovery Diode
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| File Size |
226.02K /
5 Page |
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IRF[International Rectifier]
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| Part No. |
IRHE57133SE JANSR2N7500U5 IRHE57133SE-15
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| OCR Text |
...ns
o
C
g
www.irf.com
1
05/06/04
IRHE57133SE, JANSR2N7500U5
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unles...270A/s, VDD 130V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VG... |
| Description |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
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| File Size |
173.19K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRLIZ34NPBF
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| OCR Text |
...10 16 3.7 5.0 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Continuous Drain Current, VGS @ 10V ...270A/s, VDD V(BR)DSS, TJ 175C
IRLIZ34NPbF
10000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.... |
| Description |
HEXFET Power MOSFET
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| File Size |
252.63K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRLIZ34N
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| OCR Text |
...10 16 3.7 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC...270A/s, VDD V(BR)DSS, TJ 175C
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRLZ34N ... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
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| File Size |
101.35K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRLIZ44NPBF
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| OCR Text |
...10 25 4.5 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC ...270A/s, VDD V(BR)DSS, T J 175C
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRLZ44N... |
| Description |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
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| File Size |
250.53K /
8 Page |
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linear
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| Part No. |
LTC1772B
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| OCR Text |
...uters Distributed 3.3V, 2.5V or 1.8V Power Systems
TYPICAL APPLICATION
100 C1 10F 10V VIN 2.5V TO 9.8V
EFFICIENCY (%)
R1 0.03 1 10k 220pF ITH/RUN PGATE LTC1772B 2 3 GND VFB VIN SENSE - 5 4 D1 6 L1 M1 4.7H
+
C2A 47F 6V
C2B 1... |
| Description |
Constant Frequency Current Mode Step-Down DC/DC Controller in SOT-23
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| File Size |
168.45K /
12 Page |
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IRF[International Rectifier]
International Rectifier, Corp.
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| Part No. |
IRLU2705 IRLR2705 IRLU2705PBF IRLR2705PBF IRLR2705TR IRLR2705TRL IRLR2705TRR IRLR/U2705 U2705
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| OCR Text |
... Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D-Pak TO-252AA I-Pak TO-251AA
Absolute Max...270A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%.
Caculated continuous current... |
| Description |
HEXFET POWER MOSFET
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
HEXFET POWER MOSFET HEXFET功率MOSFET
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| File Size |
190.13K /
10 Page |
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