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Microsemi
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Part No. |
APTC60SKM24CT1G
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OCR Text |
...d(off) turn-off delay time 100 t f fall time inductive switching (125c) v gs = 10v v bus = 400v i d = 95a r g = 2.5 ? ...s 56 nc f = 1mhz, v r = 200v 260 c total capacitance f = 1mhz, v r = 400v 200 p... |
Description |
Si MOSFET SiC Diode Module
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File Size |
412.86K /
8 Page |
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it Online |
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Microsemi
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Part No. |
APTC60AM45B1G
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OCR Text |
...v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 7.2 c oss output capacitance v gs = 0v ; v ds = 25v f = 1mhz 8.5 nf... |
Description |
Phase Leg PFC
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File Size |
450.56K /
11 Page |
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it Online |
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Microsemi
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Part No. |
APTC60AM45BC1G
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OCR Text |
...v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 7.2 c oss output capacitance v gs = 0v ; v ds = 25v f = 1mhz 8.5 nf... |
Description |
Phase Leg PFC
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File Size |
447.59K /
10 Page |
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it Online |
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Microsemi
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Part No. |
APTC60AM83B1G
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OCR Text |
...v,v ds = 600v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 5000 a r ds(on) ...s continuous source current (body diode) tc = 80c 27 a v sd diode forward voltage v... |
Description |
Phase Leg PFC
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File Size |
432.51K /
10 Page |
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it Online |
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Microsemi
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Part No. |
APTGT50DH60T1G
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OCR Text |
... collector current t c = 25c 100 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 176 w rbsoa r...s t j = 150c 1.2 mj cr1 & cr4 are igbt protection diodes only downloaded from: http:///... |
Description |
Asymmetrical Bridge
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File Size |
351.93K /
6 Page |
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it Online |
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